Images à titre indicatif uniquement
IPD60R180P7ATMA1
+NomenclatureMOSFET N-CH 650V 18A TO252-3
-
FabricantTechnologie Infineon
-
Pièce fabricant #IPD60R180P7ATMA1
-
Fiche technique IPD60R180P7ATMA1 DataSheet
-
Package TO-252-3
-
En stock2648
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | CoolMOS™ P7 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 180mOhm @ 5.6A, 10V |
| Vgs(th)(Max)@Id | 4V @ 280µA |
| GateCharge(Qg)(Max)@Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1081 pF @ 400 V |
| PowerDissipation(Max) | 72W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO252-3 |
Présentation
Description
The IPD60R180P7ATMA1 offers low on-state resistance (R_DS(on)), which helps in reducing power losses and improving overall efficiency. With its fast switching capabilities, it enhances the performance of power conversion systems. The device comes in a TO-252 package, facilitating efficient thermal management and ease of mounting on PCBs.
Overall, the IPD60R180P7ATMA1 is valued for its reliability, efficiency, and compact design, making it a solid choice for engineers looking to optimize power efficiency in various electronic applications.
Equivalent
- IPP60R180P7XKSA1 (Infineon)
- STL18N60M6 (STMicroelectronics)
- FDPF18N60NZ (ON Semiconductor)
- IRFB18N60KPBF (Infineon)
These are similar 600V/180mΩ MOSFETs in TO-252 or comparable packages. Verify specs like gate charge and switching characteristics for exact compatibility.
Features
1. Voltage and Current Ratings: It operates at a voltage of up to 600V, making it suitable for high-voltage applications.
2. RDS(on): It offers a low on-resistance, around 180mohms, which minimizes power loss and improves efficiency.
3. Fast Switching: The device is designed for fast-switching applications, reducing switching losses.
4. Thermal Performance: It features efficient thermal management, enabling better heat dissipation.
5. Package Type: Typically available in a TO-220 package, which is a common choice for power semiconductors due to good thermal and electrical performance.
6. Applications: Ideal for use in applications such as switched-mode power supplies (SMPS), motor drives, and various power conversion systems.
Overall, the IPD60R180P7ATMA1 is tailored for applications requiring efficiency and reliability in power management systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET's operation. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): This pin is the output through which current flows out of the MOSFET. It is connected to the load in a typical application.
3. Source (S): This pin is the return path for the current flowing through the MOSFET. It is typically connected to ground in an N-channel MOSFET application like this one.
The IPD60R180P7ATMA1 is engineered for efficiency and reduced energy loss, making it suitable for a variety of high-voltage applications such as power supplies and converters.
Manufacturer
Application
- Switched-Mode Power Supplies (SMPS): Used in AC/DC and DC/DC converters for servers, telecom, and industrial power systems.
- Motor Control: Efficient driving in industrial motors, drones, and appliances.
- Renewable Energy: Solar inverters and energy storage systems.
- Lighting: LED drivers and high-efficiency ballasts.
- Automotive: On-board chargers (OBC) and auxiliary power supplies.
Its low on-resistance and fast switching make it ideal for high-frequency, high-efficiency designs.
