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IPD50N06S4-09
+NomenclatureMOSFETs N-Ch 60V 50A DPAK-2 OptiMOS-T2
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FabricantTechnologie Infineon
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Pièce fabricant #IPD50N06S4-09
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Fiche technique IPD50N06S4-09 DataSheet
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En stock8896
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Spécifications
| Attribut | Valeur |
| Packaging | MouseReel |
| StandardPackQty | 2500 |
Présentation
Description
The IPD50N06S4-09 features low on-resistance (R_DS(on)), which minimizes power losses and heat generation, making it suitable for applications like DC-DC converters, motor drives, and various switching applications. Its TO-252 (DPAK) package offers efficient thermal performance, aiding in heat dissipation.
The device also supports fast switching speeds, ensuring efficient operation in high-frequency applications. It is designed to handle high power levels while maintaining robustness and reliability. Overall, the IPD50N06S4-09 is ideal for applications requiring efficient power management and switching performance.
Equivalent
1. IRFZ44N - by International Rectifier
2. NTD4906N - by ON Semiconductor
3. STP55NF06 - by STMicroelectronics
4. FQP50N06 - by Fairchild Semiconductor
Ensure to compare electrical characteristics like Rds(on), Vds, and Id to confirm suitability for your application.
Features
1. Voltage and Current Ratings: It supports a drain-source voltage (V_DS) of up to 60V and a continuous drain current (I_D) of 50A, making it suitable for medium to high-power applications.
2. R_DS(on): It has a low on-state resistance, which reduces power losses and enhances efficiency in power switching applications.
3. Design and Package: The MOSFET is designed with a compact and robust TO-252 package, offering ease of use in PCB mounting and efficient thermal performance.
4. Technology: Leveraging Infineon's OptiMOS™ technology, it provides improved switching performance and reduced gate charge, contributing to enhanced energy efficiency.
5. Applications: It's ideal for applications in automotive, industrial, and consumer electronics, such as motor control, power supplies, and DC-DC converters.
6. Performance: The device offers fast switching speeds and high reliability, facilitating efficient power management in electronic systems.
These features make the IPD50N06S4-09 a versatile choice for various power electronic applications.
Pinout
1. Pin 1 - Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate pin relative to the source pin allows current to flow between the drain and source pins.
2. Pin 2 - Drain (D): This pin is the terminal where the main current flows out of the transistor when it is in the "on" state. It is connected to the load in a circuit.
3. Pin 3 - Source (S): This pin is the terminal where current enters the transistor when it is conducting. It is typically connected to ground or the negative side of the power supply in a circuit.
The IPD50N06S4-09 is designed for use in automotive and industrial applications, offering low on-resistance and fast switching capabilities.
Manufacturer
Application
1. Automotive Systems: It is used in electronic control units (ECUs), motor drives, and battery management systems due to its robustness and efficiency.
2. Industrial Power Supplies: Its high current capability makes it suitable for use in power supply units, inverters, and converters.
3. Consumer Electronics: Utilized in devices like LCD displays and power adapters for its fast switching and energy efficiency.
4. Renewable Energy Systems: Used in solar inverters and wind turbine systems to optimize power conversion and control.
These applications leverage the MOSFET's features like low on-resistance and fast switching speed.