IPD50N04S3-08

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IPD50N04S3-08

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Spécifications

Attribut Valeur
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity 2500
Technology Si
REACH - SVHC Details
Mounting Type SMD/SMT
Package / Case DPAK-3 (TO-252-3)
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain - Source Breakdown Voltage 40 V
Id - Continuous Drain Current 50 A
Rds On 8 mOhms
Vgs - Gate - Source Voltage - 20 V, + 20 V
Vgs th - Gate - Source Threshold Voltage 4 V
Qg - Gate Charge 27 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 68 W
Channel Mode Enhancement
Tradename OptiMOS
Configuration Single
Fall Time 6 ns
Height 2.3 mm
Length 6.5 mm
Rise Time 7 ns
Series OptiMOS-T
Transistor Type 1 N-Channel
Typical Turn - Off Delay Time 16 ns
Typical Turn - On Delay Time 11 ns
Width 6.22 mm
Part # Aliases IPD5N4S38XT SP000261218 IPD50N04S308ATMA1
Unit Weight 0.011640 oz
Qualification AEC-Q100

Présentation

Description

The IPD50N04S3-08 is a high-performance N-channel MOSFET designed for power applications. It features a low on-resistance (RDS(on)) of 4 mΩ, facilitating efficient conduction with minimal power loss, making it suitable for applications like automotive, power supplies, and motor control. With a maximum drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 50A, it is capable of handling significant power loads.
The device is housed in a TO-220 package, which aids in effective heat dissipation. Its fast switching speeds enhance performance in high-frequency applications. The IPD50N04S3-08 is optimized for low gate charge (Qg), which reduces drive losses and enhances overall efficiency.
This MOSFET is commonly used in DC-DC converters, inverters, and other high-efficiency power management systems. Its robust specifications make it a reliable choice for engineers seeking durable and efficient solutions in their designs.

Equivalent

The IPD50N04S3-08 is an N-channel MOSFET. Equivalent products include the BUK7Y2R8-60E, STP50NF06, IRF3205, and FQP50N06. Ensure to check specifications like voltage, current ratings, and RDS(on) values for compatibility with your application. Always confirm with the datasheets for precise equivalency.

Features

The IPD50N04S3-08 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (VDS) of 40V, allowing for use in various power management applications.
2. Current Rating: Capable of handling continuous drain current (ID) up to 50A, making it suitable for high current applications.
3. RDS(on): Low on-state resistance (RDS(on) typically 8 mΩ), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Low gate threshold voltage (VGS(th)), enabling easy drive compatibility with various logic levels.
5. Thermal Performance: Features a robust package with good thermal dissipation properties, ensuring reliability under high load conditions.
6. Fast Switching: High-speed switching capability, which is beneficial for applications like DC-DC converters and motor drives.
7. Package Type: Typically available in a TO-220 or similar package for efficient heat management.
These features make the IPD50N04S3-08 ideal for power supplies, automotive applications, and other demanding environments.

Pinout

The IPD50N04S3-08 is a N-channel MOSFET with a total of 5 pins. Its primary functions include switching and amplification in various electronic applications. The pinout is as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The main current-carrying terminal, where the load is connected.
3. Source (S): The terminal through which current exits the device.
This MOSFET is designed for high efficiency and has low on-resistance, making it suitable for power management applications, including DC-DC converters and motor drives. Its specifications typically include a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 50A, depending on the thermal conditions.

Manufacturer

The IPD50N04S3-08 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer known for producing a wide range of products, including power semiconductors, microcontrollers, and sensors. The company focuses on various applications, such as automotive, industrial, and communication technologies. Infineon is recognized for its innovation in power management solutions and has a strong emphasis on energy efficiency and sustainable technologies. Established in 1999, the company has its headquarters in Neubiberg, Germany, and operates worldwide, serving markets that require advanced semiconductor solutions.

Application

The IPD50N04S3-08 is a N-channel MOSFET primarily used in power management applications. Its key areas include:
1. DC-DC Converters: Efficient switching in buck and boost converters.
2. Power Supply Units (PSUs): Used in high-efficiency power supplies for various electronics.
3. Motor Control: Suitable for driving motors in industrial and automotive applications.
4. Switching Regulators: Functions as a high-speed switch in linear and switching regulators.
5. LED Drivers: Controls current in LED lighting systems.
6. Class D Amplifiers: Enhances efficiency in audio amplifiers.
Its high voltage and current ratings make it ideal for applications requiring robust power handling.

Package

The IPD50N04S3-08 is packaged in a DPAK (TO-252) format. This surface-mount package is designed for power MOSFET applications, offering good thermal performance and a compact footprint.

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