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IPD30N08S2L-21
+NomenclatureMOSFETs N-Ch 75V 30A DPAK-2 OptiMOS
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FabricantTechnologie Infineon
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Pièce fabricant #IPD30N08S2L-21
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Fiche technique IPD30N08S2L-21 DataSheet
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Spécifications
| Attribut | Valeur |
| Packaging | MouseReel |
| StandardPackQty | 2500 |
Présentation
Description
Key features of the IPD30N08S2L-21 include a low R_DS(on) value, which minimizes power losses and improves efficiency. It typically supports applications with a maximum drain-source voltage (V_DS) of 80V and offers a continuous drain current (I_D) capacity, making it suitable for medium to high power applications. The MOSFET's design also incorporates fast switching capabilities, enhancing its suitability for high-frequency applications.
Additionally, the device is housed in a TO-252 (DPAK) package, promoting efficient heat dissipation and ease of integration into various circuit designs. Overall, the IPD30N08S2L-21 is a reliable choice for electronic designers seeking performance and efficiency in power switching solutions.
Equivalent
1. IRFZ44N from Vishay/Siliconix
2. FQP30N06L from ON Semiconductor
3. STP30N06 from STMicroelectronics
4. FDP7030BL from Fairchild Semiconductor
When selecting an equivalent, ensure the specifications match your requirements, such as voltage, current, and Rds(on). Always refer to datasheets for detailed comparisons.
Features
1. Low On-Resistance: It offers low R_DS(on), which minimizes power loss and enhances efficiency.
2. High-Current Capability: Suitable for applications requiring high current, supporting up to 30A.
3. Low Gate Charge: Facilitates fast switching speeds and reduces driving power requirements, improving overall performance.
4. Thermal Resistance: Efficient thermal management through its package design, ensuring reliability at high power levels.
5. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 80V, suitable for various power levels.
6. Logic Level Gate Drive: Can be driven by lower voltage levels, making it compatible with low-power control circuits.
7. Applications: Ideal for use in DC-DC converters, power management systems, and automotive electronics.
The IPD30N08S2L-21 is encapsulated in a TO-252 package, providing a compact solution for space-constrained applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching operation. Applying the appropriate voltage to the gate turns the MOSFET on or off.
2. Drain (D): This pin is connected to the main power line and is the terminal through which the main current flows when the MOSFET is in the "on" state.
3. Source (S): This pin is connected to the ground or the load, completing the circuit for the current to flow through when the MOSFET is activated.
Additionally, the tab or the back of the package is often connected to the drain pin for thermal dissipation purposes. The IPD30N08S2L-21 is used for applications requiring low on-state resistance and efficient power handling.
Manufacturer
Application
1. Automotive Systems: Used in electronic control units (ECUs) for battery management, motor controls, and lighting systems.
2. Power Management: Suitable for DC-DC converters and voltage regulation in power supplies.
3. Industrial Equipment: Implemented in motor drives and industrial automation systems for efficient power control.
4. Consumer Electronics: Used in power adapters and chargers for increased efficiency.
5. Renewable Energy: Employed in solar inverters and wind turbines for switching and power conversion.
These applications benefit from the MOSFET’s low on-resistance and fast switching capabilities.