Images à titre indicatif uniquement
IPD079N06L3 G
+NomenclatureMOSFETs N-Ch 60V 50A DPAK-2 OptiMOS 3
-
FabricantTechnologie Infineon
-
Pièce fabricant #IPD079N06L3 G
-
Fiche technique IPD079N06L3 G DataSheet
-
En stock28371
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Packaging | MouseReel |
| Standard Pack Qty | 2500 |
Présentation
Description
IPD079N06L3 G appears to be a specific code or designation, likely related to a specialized topic, product, or course. Without further context, it is challenging to offer a precise description. However, if this pertains to an academic or technical subject, it might refer to a module or course identifier used by educational institutions to catalog and organize their curriculum. Alternatively, if this code relates to a product, it could be a model number or batch code used by manufacturers for inventory and tracking purposes.
In either scenario, the introduction to IPD079N06L3 G would typically provide essential information such as its purpose, key features, intended audience, and any prerequisite knowledge or skills. If it's a course, the introduction may outline learning objectives and topics covered. If a product, it might describe specifications, applications, and benefits. For a more detailed explanation, additional context about the field or industry in which IPD079N06L3 G is relevant would be necessary.
In either scenario, the introduction to IPD079N06L3 G would typically provide essential information such as its purpose, key features, intended audience, and any prerequisite knowledge or skills. If it's a course, the introduction may outline learning objectives and topics covered. If a product, it might describe specifications, applications, and benefits. For a more detailed explanation, additional context about the field or industry in which IPD079N06L3 G is relevant would be necessary.
Equivalent
The IPD079N06L3 G is a MOSFET transistor from Infineon Technologies. Equivalent products may include similar MOSFETs with comparable specifications, such as the Vishay SiR662DP, ON Semiconductor NTP60N06, or STMicroelectronics STP60NF06. It's crucial to verify specific parameters like voltage, current rating, Rds(on), and package type to ensure compatibility for your application. Always consult the datasheets to confirm equivalency.
Features
The IPD079N06L3 G is a power MOSFET, and its key features typically include:
1. N-Channel MOSFET: This device is a type of N-channel MOSFET, known for its efficiency in switching applications.
2. Low On-Resistance: Offers low R_DS(on), reducing power loss and improving efficiency in power conversion applications.
3. Voltage Rating: Suitable for applications with certain voltage requirements, often around 60V, though you should check the datasheet for exact numbers.
4. Current Capacity: Capable of handling significant current, often in the range of tens of amperes, which makes it suitable for high-power applications.
5. Thermal Performance: Designed to manage heat efficiently, often featuring enhanced thermal characteristics to support high-current operations.
6. Applications: Commonly used in power management, DC-DC converters, and load switch applications.
7. Package Type: Comes in a specific package that supports efficient heat dissipation, like TO-220 or DPAK, for example.
Always refer to the specific datasheet for the exact specifications and features of the IPD079N06L3 G, as these can vary slightly based on the manufacturer and specific model version.
1. N-Channel MOSFET: This device is a type of N-channel MOSFET, known for its efficiency in switching applications.
2. Low On-Resistance: Offers low R_DS(on), reducing power loss and improving efficiency in power conversion applications.
3. Voltage Rating: Suitable for applications with certain voltage requirements, often around 60V, though you should check the datasheet for exact numbers.
4. Current Capacity: Capable of handling significant current, often in the range of tens of amperes, which makes it suitable for high-power applications.
5. Thermal Performance: Designed to manage heat efficiently, often featuring enhanced thermal characteristics to support high-current operations.
6. Applications: Commonly used in power management, DC-DC converters, and load switch applications.
7. Package Type: Comes in a specific package that supports efficient heat dissipation, like TO-220 or DPAK, for example.
Always refer to the specific datasheet for the exact specifications and features of the IPD079N06L3 G, as these can vary slightly based on the manufacturer and specific model version.
Pinout
The IPD079N06L3 G is a Power MOSFET produced by Infineon Technologies. It features a standard TO-252 (DPAK) package, which typically has three pins. The pin configuration is as follows:
1. Pin 1 (Gate): This is the control terminal of the MOSFET. A voltage applied to this pin controls the operation of the device, allowing current to flow between the drain and source.
2. Pin 2 (Drain): This is the terminal through which the main current flows when the MOSFET is in the "on" state.
3. Pin 3 (Source): This terminal is connected to the ground or return path of the circuit. It serves as the reference point for the drain current.
The tab on the package also serves as an additional connection to the drain, assisting in heat dissipation. The IPD079N06L3 G is suitable for applications requiring efficient power management, such as in automotive and industrial systems, due to its low on-resistance and robustness.
1. Pin 1 (Gate): This is the control terminal of the MOSFET. A voltage applied to this pin controls the operation of the device, allowing current to flow between the drain and source.
2. Pin 2 (Drain): This is the terminal through which the main current flows when the MOSFET is in the "on" state.
3. Pin 3 (Source): This terminal is connected to the ground or return path of the circuit. It serves as the reference point for the drain current.
The tab on the package also serves as an additional connection to the drain, assisting in heat dissipation. The IPD079N06L3 G is suitable for applications requiring efficient power management, such as in automotive and industrial systems, due to its low on-resistance and robustness.
Manufacturer
The IPD079N06L3 G is a product manufactured by Infineon Technologies. Infineon Technologies is a German semiconductor company that focuses on designing, developing, and manufacturing a wide range of semiconductor solutions. It is one of the leading companies in the field of electronics, providing products for applications in automotive, industrial power control, power management, and digital security solutions. Infineon's products are used in various sectors including automotive, communication, consumer electronics, and smart city infrastructure.
Application
The IPD079N06L3 G is a power MOSFET, and its application areas include automotive systems, industrial automation, power management, and consumer electronics. In automotive systems, it can be used for motor control, lighting, and power distribution. In industrial automation, it serves in motor drives, power supplies, and robotic control systems. In power management, it is suitable for DC-DC converters, inverters, and power distribution units. Additionally, in consumer electronics, it can be applied to battery management systems, power adapters, and audio amplifiers. Its features like low on-state resistance and high efficiency make it versatile for various high-performance and energy-efficient applications.
Package
The package type for IPD079N06L3 G is a TO-263 (D²PAK) surface-mount package, which is often used for power semiconductor devices, providing efficient heat dissipation and ease of assembly on PCBs.
