IPB107N20N3G

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IPB107N20N3G

+Nomenclature

  • FabricantTechnologie Infineon

  • Pièce fabricant #IPB107N20N3G

  • En stock2966

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Spécifications

Attribut Valeur
Manufacturer Infineon Technologies
Package TO-263-3
OperatingTemperature -55℃~+175℃
RDS(on) 10.7mΩ@10V,88A
DraintoSourceVoltage 200V
Pd-PowerDissipation 300W
Current-ContinuousDrain(Id) 88A
ReverseTransferCapacitance(Crss@Vds) 533pF@100V
InputCapacitance(Ciss@Vds) 7.1nF@100V
Type 1 N-channel
GateThresholdVoltage(Vgs(th)@Id) 4V
GateCharge(Qg) 87nC@10V

Présentation

Description

The IPB107N20N3G is a high-performance N-channel MOSFET designed for various power applications, including automotive and industrial systems. With a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 107A, it is suitable for high-voltage operations. Its low on-resistance (R_DS(on)) of around 9.5 mΩ at a gate voltage of 10V ensures efficient power loss management, contributing to improved thermal performance.
The device features a fast switching capability, making it ideal for use in switching power supplies, motor drives, and other applications requiring rapid on/off cycles. The IPB107N20N3G also includes a robust gate oxide design, enhancing reliability under various operating conditions.
Additionally, it is packaged in a TO-220 form factor, allowing for effective heat dissipation and easy mounting in circuit designs. Overall, the IPB107N20N3G is a versatile MOSFET that meets the demands of contemporary power electronic applications.

Equivalent

The IPB107N20N3G is an N-channel MOSFET with specific characteristics. Equivalent products include the IRF3205, STP55NF06L, and BSS130. For a precise substitute, always check the specifications (like voltage, current, and R_DS(on)) to ensure compatibility for your application.

Features

The IPB107N20N3G is a high-performance N-channel MOSFET designed for various power applications. Here are its key features:
1. Low RDS(on): Offers low on-resistance, enabling efficient power management and reduced heat generation, which enhances overall system performance.

2. High Voltage Rating: Supports a maximum drain-source voltage (VDS) of 200V, making it suitable for high-voltage applications.

3. High Current Capability: Can handle a continuous drain current (ID) of up to 107A, allowing it to manage significant loads in power circuits.

4. Fast Switching: Optimized for high-speed switching applications, which is beneficial in power converters and inverters.

5. Thermal Performance: Features a TO-220 package that provides excellent thermal performance, facilitating efficient heat dissipation.
6. Low Gate Charge: Low gate charge (Qg) ensures minimal drive power is required, improving the efficiency of switching operations.
Overall, the IPB107N20N3G is ideal for applications such as motor drives, power supplies, and other power management systems.

Pinout

The IPB107N20N3G is a N-channel MOSFET designed for power applications. It typically comes in a TO-220 package, which has three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the MOSFET on or off.

2. Drain (D): This is the pin where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit.
The device is characterized by its low on-resistance, high current handling capability, and fast switching speed, making it suitable for applications like power supplies, motor drivers, and other power switching circuits.

Manufacturer

The IPB107N20N3G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company is known for its focus on energy efficiency, mobility, and security applications, catering to various industries such as automotive, industrial, and consumer electronics.
Infineon plays a significant role in the global semiconductor market, emphasizing innovation and sustainability in its product offerings. The IPB107N20N3G itself is a N-channel MOSFET, which is commonly used in power management applications due to its high efficiency and performance characteristics. This makes it suitable for a variety of applications, including DC-DC converters, motor drives, and power supply circuits.

Application

The IPB107N20N3G is a high-performance N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. DC-DC Converters: Efficient switching in voltage regulation circuits.
2. Motor Drivers: Control of electric motors in automotive and industrial applications.
3. Power Supplies: Used in uninterruptible power supplies (UPS) and power adapters.
4. LED Drivers: Efficiently managing current in LED lighting systems.
5. Battery Management Systems: Enhancing efficiency in charging and discharging processes.
Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs in various electronic systems.

Package

The IPB107N20N3G is typically packaged in a TO-220 format, which is a standard package for power transistors. This type of package allows for effective heat dissipation and is suitable for high-power applications.

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