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IPA80R460CE
+NomenclatureMOSFETs CONSUMER
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FabricantTechnologie Infineon
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Pièce fabricant #IPA80R460CE
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Fiche technique IPA80R460CE DataSheet
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En stock4335
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Spécifications
| Attribut | Valeur |
| Packaging | Tube |
Présentation
Description
Key characteristics of the IPA80R460CE include low on-state resistance, which minimizes power losses and improves efficiency. It is designed with enhanced fast-switching capabilities, contributing to reduced switching losses and overall energy savings. The MOSFET's rugged design ensures reliability under challenging conditions.
Additionally, the IPA80R460CE supports simple and flexible design integration, making it suitable for engineers looking to optimize power systems. Its compact form factor allows for efficient space utilization in electronic assemblies. Overall, the IPA80R460CE is a robust choice for applications requiring high voltage and high efficiency performance.
Equivalent
1. STMicroelectronics' STW80N45K3
2. NXP's PSMN2R0-45YLD
3. ON Semiconductor's FDPF51N25T
4. Vishay's SiHP31N60E-GE3
These alternatives have similar voltage and current ratings, but it's essential to verify specific application requirements and pin configurations as they may vary. Always consult datasheets for detailed comparisons.
Features
1. Voltage and Current Ratings: It typically offers a breakdown voltage of around 800V, suitable for high-voltage applications.
2. RDS(on): It has a low on-resistance, which minimizes conduction losses and improves efficiency.
3. Fast Switching: Designed for fast switching speeds, it enhances performance in high-frequency applications.
4. Thermal Performance: The MOSFET provides superior thermal performance, which is crucial for maintaining reliability and longevity under high power conditions.
5. Energy Efficiency: Optimized for energy-efficient operations, making it suitable for applications like power supplies and converters.
6. Package Options: Available in various package options for different design needs, often including through-hole and surface-mount types.
These features make the IPA80R460CE suitable for applications in industrial power supplies, renewable energy systems, and other high-voltage, high-efficiency applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching. A voltage applied to the gate determines whether the MOSFET is in the on or off state.
2. Drain (D): This is the main terminal where the current flows out of the MOSFET. It is connected to the load in most applications.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in most configurations. It is the terminal through which the current enters the MOSFET.
The IPA80R460CE is known for its high voltage capability, low on-state resistance, and fast switching, making it suitable for various applications like power supplies and converters.
Manufacturer
Application
1. Power Supply Units (PSUs): Utilized in server, telecom, and industrial power supplies for efficient energy conversion.
2. Motor Drives: Used in variable frequency drives (VFDs) and other motor control applications for enhanced performance.
3. Inverters: Ideal for solar inverters and uninterruptible power supplies (UPS) due to its high efficiency and fast switching.
4. Lighting: Applied in LED drivers and electronic ballasts for energy-efficient lighting solutions.
5. Industrial Applications: Suitable for use in industrial automation systems where reliable power management is crucial.