IKW40T120

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IKW40T120

+Nomenclature

  • FabricantTechnologie Infineon

  • Pièce fabricant #IKW40T120

  • En stock5500

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Spécifications

Attribut Valeur
Packaging Tube
Brand Infineon Technologies
Product Type IGBT Transistors
Subcategory IGBTs
Maximum Gate Emitter Voltage - 20 V, 20 V
Series Trenchstop IGBT3
Package / Case TO-247-3
Mounting Type Through Hole
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Unit Weight 1.340411 oz
Factory Pack Quantity 240
Part # Aliases IKW4T12XK SP000013940 IKW40T120FKSA1
Technology Si
Configuration Single
Collector - Emitter Voltage VCEO Max 1.2 kV
Collector - Emitter Saturation Voltage 1.7 V
Continuous Collector Current at 25 C 75 A
Pd - Power Dissipation 270 W
Gate - Emitter Leakage Current 600 nA
Tradename TRENCHSTOP
Height 20.95 mm
Length 15.9 mm
Width 5.3 mm
Shipping Restrictions Mouser does not presently sell this product in your region.

Présentation

Description

The IKW40T120 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module from Infineon Technologies, designed for industrial applications, particularly in power conversion and motor drive systems. It features a voltage rating of 1200V and a continuous current rating of 40A, making it suitable for high-voltage and high-current applications.
This IGBT module utilizes advanced technologies for improved efficiency and thermal performance, reducing power losses during operation. It is characterized by fast switching capabilities, which enhances the performance of power electronic systems. The IKW40T120 is housed in a compact and robust package, facilitating ease of integration into various applications such as inverters, converters, and UPS systems.
Key features include low conduction and switching losses, a high degree of reliability, and the ability to operate in harsh environments. Overall, the IKW40T120 is an ideal choice for engineers looking to optimize power management solutions in renewable energy, industrial automation, and electric vehicle applications.

Equivalent

The IKW40T120 is an IGBT module manufactured by Infineon. Equivalent products include the Mitsubishi MG400Q2YS50, the Semikron SKM400GB123D, and the ON Semiconductor FGA40T120. Additionally, consider devices with similar specifications from other manufacturers such as STMicroelectronics or Toshiba. Always verify voltage, current ratings, and thermal characteristics for compatibility.

Features

The IKW40T120 is a high-performance N-channel IGBT (Insulated Gate Bipolar Transistor) designed for medium to high voltage applications. Key features include:
1. Voltage Rating: 1200V, making it suitable for applications requiring high voltage handling.
2. Current Rating: Capable of handling up to 40A, providing robust performance in power conversion.
3. Low Conduction Losses: It features low on-state voltage drop, enhancing efficiency in power applications.
4. Fast Switching: Designed for fast switching capabilities, which reduces switching losses and improves overall efficiency.
5. Thermal Performance: Excellent thermal stability, allowing for reliable operation at elevated temperatures.
6. Ruggedness: Built to withstand harsh conditions, ensuring long-term reliability in demanding environments.
7. Applications: Commonly used in motor drives, inverters, and power supplies.
These attributes make the IKW40T120 ideal for various industrial applications requiring efficient power control.

Pinout

The IKW40T120 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies. It typically comes in a standard package with a pin count of 5.
The functions of the pins are as follows:
1. Gate (G): Controls the switching of the IGBT.
2. Collector (C): Connects to the load and conducts current when the IGBT is turned on.
3. Emitter (E): Connects to the ground or the negative side of the power supply.
4. Thermal Pad (TP): Provides thermal management for heat dissipation.
5. Current Sense (CS): Optional pin for current sensing applications.
The IKW40T120 is designed for high-voltage applications, typically operating at 1200V and can handle continuous currents up to 40A. It is commonly used in power conversion systems, motor drives, and industrial applications.

Manufacturer

The IKW40T120 is a semiconductor component manufactured by Infineon Technologies AG. Infineon is a leading global company that specializes in semiconductor solutions, particularly in the areas of power management, automotive electronics, and security technologies. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon operates in various sectors including automotive, industrial, and communication technologies.
Infineon’s products are critical for enabling energy efficiency and high performance in a wide range of applications, from electric vehicles and renewable energy systems to consumer electronics and smart home devices. The IKW40T120 is specifically a IGBT (Insulated Gate Bipolar Transistor) module, used for power switching applications, making it highly relevant in industrial and automotive sectors where efficient power management is crucial. The company emphasizes innovation and sustainability, aiming to create technologies that support a greener, more connected world.

Application

The IKW40T120 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronics applications. Key areas include:
1. Industrial Drives: Used in motor control for varying speeds and torque in industrial machinery.
2. Renewable Energy: Utilized in solar inverters and wind turbine converters.
3. Switching Power Supplies: Employed in high-efficiency power conversion systems.
4. Electric Vehicles: Integral in traction drives and battery management systems.
5. Uninterruptible Power Supplies (UPS): Provides reliable power backup solutions.
6. Welding Equipment: Facilitates efficient power switching in arc welding applications.
Its high voltage and current ratings make it suitable for demanding applications.

Package

The IKW40T120 is typically packaged in a TO-247 format, which is a standard package type for high-power semiconductor devices. This package provides good thermal performance and is suitable for applications requiring high voltage and current handling.