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IKD10N60RF
+NomenclatureIKD10N60 - DISCRETE IGBT WITH AN
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FabricantTechnologie Infineon
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Pièce fabricant #IKD10N60RF
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Fiche technique IKD10N60RF DataSheet
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Package TO-252-3
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En stock5247
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown(Max) | 600 V |
| Current - Collector(Ic)(Max) | 20 A |
| Current - Collector Pulsed(Icm) | 30 A |
| Vce(on)(Max) @ Vge Ic | 2.5V @ 15V, 10A |
| Power - Max | 150 W |
| Switching Energy | 190µJ (on), 160µJ (off) |
| Input Type | Standard |
| Gate Charge | 64 nC |
| Td(on / off) @ 25°C | 12ns/168ns |
| Test Condition | 400V, 10A, 26Ohm, 15V |
| Reverse Recovery Time (trr) | 72 ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
