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IDH05G65 - 600 V SILICION CARBID
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FabricantTechnologie Infineon
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Pièce fabricant #IDH05G65C5XKSA2
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Fiche technique IDH05G65C5XKSA2 DataSheet
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Package TO-220-2
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En stock5198
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | CoolSiC™+ |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified(Io) | 5A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
| Capacitance @ Vr F | 160pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-2 |
