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HYG011N04LS1C2
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FabricantHuayi
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Pièce fabricant #HYG011N04LS1C2
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Fiche technique HYG011N04LS1C2 DataSheet
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En stock15303
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Spécifications
| Attribut | Valeur |
| Manufacturer | HUAYI |
| Package / Case | DFN-8(5.2x5.9) |
| Operating Temperature | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 165A |
| Pd - Power Dissipation | 75W |
| Drain to Source Voltage (Vdss) | 40V |
| Rds(on) | 1.1mΩ@10V,40A |
| Gate Threshold Voltage (Vgs(th) @ Id) | 1V |
| Type | 1 N-channel |
| Gate Charge(Qg) | 89nC@10V |
| Input Capacitance(Ciss @ Vds) | 5876pF |
| Reverse Transfer Capacitance (Crss @ Vds) | 58pF@25V |
Présentation
Description
Equivalent
Features
1. N-Channel MOSFET: It is an N-channel type, meaning it conducts when a positive voltage is applied to the gate terminal.
2. Low On-Resistance: Offers low on-resistance, minimizing power loss and heat generation during operation.
3. High-Speed Switching: Designed for fast switching speeds, making it ideal for applications requiring quick response times.
4. Voltage & Current Ratings: Suitable for specific voltage and current levels, typically detailed in the datasheet for precise application use.
5. Thermal Performance: Good thermal management capabilities, often with a specified maximum junction temperature.
6. Package Type: Comes in a specific package size that influences mounting and thermal characteristics.
7. Applications: Commonly used in power management, motor control, and other applications requiring efficient high-speed switching.
For exact specifications, it's best to consult the manufacturer's datasheet, as features can vary slightly between models and manufacturers.
Pinout
1. Gate (G): This pin is responsible for controlling the MOSFET. By applying a voltage to the gate, the device can be turned on or off, allowing current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current enters the MOSFET when it's in the 'on' state.
3. Source (S): The source is the terminal through which the main current exits the MOSFET.
The HYG011N04LS1C2 is designed for specific applications that require efficient power management and switching. The purpose of such a MOSFET is usually to amplify or switch electronic signals in various circuits, making it a crucial component in power electronics. For precise technical specifications, including the exact pin arrangement, refer to the manufacturer's datasheet for the HYG011N04LS1C2.
Manufacturer
Application
1. Power Management: Used in DC-DC converters, voltage regulators, and power supplies.
2. Motor Control: Utilized in motor drivers for efficient speed and torque control.
3. Switching Applications: Employed in high-speed switching for inverters and other switching devices.
4. Automotive Electronics: Applied in electronic control units (ECUs) for vehicle systems.
5. Consumer Electronics: Used in power management circuits for devices like laptops and smartphones.
6. Industrial Equipment: Implemented in automation systems for controlling power delivery.
These applications leverage the MOSFET’s efficiency in switching and power handling.