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MOSFET N-CH 55V 75A TO220-3
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FabricantSociété Harris
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Pièce fabricant #HUF75339P3
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Fiche technique HUF75339P3 DataSheet
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En stock2903
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Spécifications
| Attribut | Valeur |
| Series | UltraFET™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 20 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
Présentation
Description
HUF75339P3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. This component features a low on-resistance, which enhances efficiency in various electronic circuits by minimizing energy loss during operation. It is commonly used in applications such as DC-DC converters, power supplies, and motor drives due to its ability to handle high voltages and currents.
Key specifications include a maximum drain-source voltage (Vds) typically around 30V, a continuous drain current (Id) rating that can reach up to 75A, and a fast switching speed that is beneficial for high-frequency applications. The device is housed in a TO-220 package, facilitating effective heat dissipation and ease of mounting on PCB.
The HUF75339P3 is ideal for designers looking to optimize power efficiency and thermal performance in their systems while ensuring robust operation under demanding conditions. Overall, it is a reliable choice for various industrial and consumer electronics applications.
Key specifications include a maximum drain-source voltage (Vds) typically around 30V, a continuous drain current (Id) rating that can reach up to 75A, and a fast switching speed that is beneficial for high-frequency applications. The device is housed in a TO-220 package, facilitating effective heat dissipation and ease of mounting on PCB.
The HUF75339P3 is ideal for designers looking to optimize power efficiency and thermal performance in their systems while ensuring robust operation under demanding conditions. Overall, it is a reliable choice for various industrial and consumer electronics applications.
Equivalent
The HUF75339P3 is a high-speed MOSFET driver. Equivalent products include the MIC4427, TC4420, and LM5101, which also serve similar functions in driving MOSFETs in various applications. Always check the specific parameters like voltage, current ratings, and package type for compatibility.
Features
The HUF75339P3 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 50A, providing robust performance in demanding conditions.
3. Rds(on): It has a low on-resistance (Rds(on)) value, typically around 7.5 mΩ, which enhances efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 1V to 2.5V, allowing for easy interfacing with low-voltage control signals.
5. Package Type: HUF75339P3 typically comes in TO-220 or similar packages, facilitating heat dissipation and easy mounting on PCBs.
6. Fast Switching: It offers rapid switching capabilities, beneficial for high-frequency applications.
These features make the HUF75339P3 ideal for use in power supplies, motor drivers, and other electronic circuits requiring efficient switching.
1. Voltage Rating: It supports a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 50A, providing robust performance in demanding conditions.
3. Rds(on): It has a low on-resistance (Rds(on)) value, typically around 7.5 mΩ, which enhances efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 1V to 2.5V, allowing for easy interfacing with low-voltage control signals.
5. Package Type: HUF75339P3 typically comes in TO-220 or similar packages, facilitating heat dissipation and easy mounting on PCBs.
6. Fast Switching: It offers rapid switching capabilities, beneficial for high-frequency applications.
These features make the HUF75339P3 ideal for use in power supplies, motor drivers, and other electronic circuits requiring efficient switching.
Pinout
The HUF75339P3 is a high-performance dual N-channel MOSFET packaged in a TO-220 form factor. It features a pin count of 3. The function of its pins is as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the device can be turned on or off, allowing or interrupting current flow between the drain and source.
2. Drain (D): This pin is where the output current flows out of the MOSFET. It connects to the load in an application.
3. Source (S): This pin is where the input current enters the MOSFET. It typically connects to ground or a low potential in a common source configuration.
The HUF75339P3 is commonly used in power management applications, including switching power supplies, motor drivers, and other high-current applications.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the device can be turned on or off, allowing or interrupting current flow between the drain and source.
2. Drain (D): This pin is where the output current flows out of the MOSFET. It connects to the load in an application.
3. Source (S): This pin is where the input current enters the MOSFET. It typically connects to ground or a low potential in a common source configuration.
The HUF75339P3 is commonly used in power management applications, including switching power supplies, motor drivers, and other high-current applications.
Manufacturer
The HUF75339P3 is manufactured by Huf Electronics. Huf Electronics is a global company specializing in automotive technology and electronic components. Founded in 1908 and headquartered in Velbert, Germany, the company develops innovative solutions for automotive applications, focusing on areas such as keyless entry systems, tire pressure monitoring systems (TPMS), and various sensor technologies. They provide products that enhance vehicle safety, comfort, and efficiency. Huf Electronics operates in several countries, demonstrating a strong commitment to research and development to meet the evolving demands of the automotive industry.
Application
The HUF75339P3 is a high-performance N-channel MOSFET commonly used in various applications, including:
1. Power Management: Ideal for DC-DC converters and switching power supplies.
2. Motor Control: Used in brushless DC motor drivers and motor control circuits.
3. Load Switching: Suitable for high-speed switching in power distribution and load management.
4. Automotive Applications: Utilized in electric vehicles and automotive electronics for efficient power handling.
5. Consumer Electronics: Employed in devices requiring efficient power switching and control.
Its low on-resistance and high switching speed make it suitable for these applications.
1. Power Management: Ideal for DC-DC converters and switching power supplies.
2. Motor Control: Used in brushless DC motor drivers and motor control circuits.
3. Load Switching: Suitable for high-speed switching in power distribution and load management.
4. Automotive Applications: Utilized in electric vehicles and automotive electronics for efficient power handling.
5. Consumer Electronics: Employed in devices requiring efficient power switching and control.
Its low on-resistance and high switching speed make it suitable for these applications.
Package
The HUF75339P3 is packaged in a TO-220 form factor. This package type is commonly used for power semiconductor devices, providing good thermal performance and ease of mounting on heat sinks.