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GT100N12D5
+NomenclatureN120V,RD(MAX)<10M@10V,VTH2.5V~3.
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FabricantGoford semi - conducteurs
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Pièce fabricant #GT100N12D5
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En stock4742
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Spécifications
| Attribut | Valeur |
| Supplier | Goford Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120 V |
| Current - Continuous Drain(Id) @ 25°C | 70A |
| Rds On(Max) @ Id Vgs | 10mOhm @ 35A, 10V |
| Vgs(th)(Max) @ Id | 3.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3050 pF @ 60 V |
| Power Dissipation (Max) | 120W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN (5x6) |
