Images à titre indicatif uniquement
GHXS100B120S-D3
+NomenclatureSIC SBD PARALLEL POWER MODULE 12
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FabricantSemiq
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Pièce fabricant #GHXS100B120S-D3
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Fiche technique GHXS100B120S-D3 DataSheet
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Package SOT-227-4
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En stock24
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | SemiQ |
| Package / Case | Tube |
| Part Status | Active |
| Diode Configuration | 2 Independent |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io)(per Diode) | 198A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 100 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Chassis Mount |
