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GD25Q80ESIGR
+Nomenclature8MBIT NOR FLASH /3.3V /SOP8 208M
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FabricantGigadevice Semiconductor (Hong Kong) Co., Ltd
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Pièce fabricant #GD25Q80ESIGR
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Package 8-SOIC (0.209, 5.30mm Width)
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En stock6421
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NOR |
| MemorySize | 8Mb (1M x 8) |
| MemoryInterface | SPI - Quad I/O |
| ClockFrequency | 133 MHz |
| WriteCycleTime-WordPage | 70µs, 2ms |
| AccessTime | 7 ns |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.209, 5.30mm Width) |
Présentation
Description
Key features include a wide operating voltage range, high-speed clock frequency, and low power consumption, making it ideal for consumer electronics, industrial devices, and other applications where space and power efficiency are critical. It includes security and protection features such as block protection, write protection, and a software reset function to ensure data integrity and prevent unauthorized access.
The GD25Q80ESIGR is housed in various package options to accommodate different design requirements and is compatible with industry-standard pin configurations. Its reliability and performance make it a popular choice for embedded systems and other applications requiring non-volatile memory storage.
Equivalent
Features
1. Memory Organization: 8 Mb arranged in 1,048,576 bytes.
2. Interface: Supports SPI modes 0 and 3.
3. Clock Frequency: Up to 104 MHz for fast data transfer.
4. Erase Capability: Supports sector erase (4KB), block erase (32KB and 64KB), and chip erase options.
5. Write Capability: Page programming with page size up to 256 bytes.
6. Low Power Consumption: Deep power-down mode reduces power usage.
7. Voltage Range: Operates typically between 2.7V and 3.6V.
8. Data Retention and Endurance: Data retention of over 20 years and endurance of 100,000 erase/write cycles.
9. Security Features: Includes a write protect feature and software write protection for blocks of memory.
These features make the GD25Q80ESIGR suitable for code shadowing, data storage, and other applications requiring reliable non-volatile memory.
Pinout
The functions of the pins are as follows:
1. CS# (Chip Select): Activates the device when low, enabling communication.
2. DO (Data Out): Serial data output, used to read data from the memory.
3. WP# (Write Protect): Used to protect the memory from being written to inadvertently.
4. GND: Ground reference for the power supply.
5. DI (Data In): Serial data input, used to program data into the device.
6. CLK (Clock): Provides the clock signal for synchronizing data transfer.
7. HOLD#: Pauses communication without deselecting the device.
8. VCC: Power supply input for the chip.
These pins work together to facilitate the storage and retrieval of data in SPI (Serial Peripheral Interface) mode, a protocol for communication between microcontrollers and small peripherals.