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GA100JT12-227
+NomenclatureTRANS SJT 1200V 160A SOT227
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FabricantGenesic semiconducteurs
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Pièce fabricant #GA100JT12-227
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Fiche technique GA100JT12-227 DataSheet
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En stock8479
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Spécifications
| Attribut | Valeur |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Tube |
| Part Status | Obsolete |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 160A (Tc) |
| Rds On(Max) @ Id Vgs | 10mOhm @ 100A |
| Input Capacitance(Ciss)(Max) @ Vds | 14400 pF @ 800 V |
| Power Dissipation (Max) | 535W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227 |
