Images à titre indicatif uniquement
G4S06508HT
+NomenclatureSIC SCHOTTKY DIODE 650V 8A 2-PIN
-
FabricantUniversal Power Technology Co., Ltd
-
Pièce fabricant #G4S06508HT
-
Fiche technique G4S06508HT DataSheet
-
Package TO-220-2 Full Pack
-
En stock3155
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Global Power Technology Co. Ltd |
| Package | Bulk |
| ProductStatus | Active |
| DiodeType | Silicon Carbide Schottky |
| Voltage-DCReverse(Vr)(Max) | 650 V |
| Current-AverageRectified(Io) | 18.5A (DC) |
| Voltage-Forward(Vf)(Max)@If | 1.7 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) |
| ReverseRecoveryTime(trr) | 0 ns |
| Current-ReverseLeakage@Vr | 50 µA @ 650 V |
| Capacitance@VrF | 395pF @ 0V, 1MHz |
| MountingType | Through Hole |
| Package/Case | TO-220-2 Full Pack |
| SupplierDevicePackage | TO-220F |