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G16P03S
+NomenclatureP30V,RD(MAX)<12M@-10V,RD(MAX)<18
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FabricantGoford semi - conducteurs
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Pièce fabricant #G16P03S
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En stock8277
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Spécifications
| Attribut | Valeur |
| Supplier | Goford Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 16A |
| Rds On(Max) @ Id Vgs | 12mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2800 pF @ 15 V |
| Power Dissipation (Max) | 3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP |
