FS50R06KE3

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FS50R06KE3

+Nomenclature

  • FabricantTechnologie Infineon

  • Pièce fabricant #FS50R06KE3

  • Fiche technique FS50R06KE3 DataSheet

  • En stock9024

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Spécifications

Attribut Valeur
MountingStyle Screw Mount
Package/Case Econo 2
Technology Si
MinimumOperatingTemperature - 40 C
MaximumOperatingTemperature + 150 C
Packaging Tray
Brand Infineon Technologies
ProductType IGBT Modules
Subcategory IGBTs
REACH-SVHC Details
Configuration Hex
Series Trench/Fieldstop IGBT3 - E3
Height 17 mm
Length 107.5 mm
Product IGBT Silicon Modules
FactoryPackQuantity:FactoryPackQuantity 10
Width 45 mm
Part#Aliases SP000091920 FS50R06KE3BOSA1
UnitWeight 6.349313 oz
ShippingRestrictions Mouser does not presently sell this product in your region.
Collector-EmitterVoltageVCEOMax 600 V
ContinuousCollectorCurrentat25C 70 A
MaximumGateEmitterVoltage 20 V
Tradename EconoPACK

Présentation

Description

The FS50R06KE3 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for various applications in industrial and automotive sectors. It features a maximum collector current rating of 50A and a voltage rating of 600V, making it suitable for medium-power applications such as motor drives, power supplies, and renewable energy systems.
This module utilizes advanced semiconductor technology to achieve low conduction and switching losses, enhancing efficiency and thermal performance. The FS50R06KE3 is typically housed in a rugged package, enabling easy integration into circuit designs while providing good heat dissipation.
Additionally, it is designed for high-speed operation, which allows for better performance in pulse-width modulation (PWM) applications. The module is part of a broader family of IGBT products, offering various configurations and ratings to meet diverse application requirements. Overall, the FS50R06KE3 is an effective choice for engineers seeking reliable and efficient power management solutions.

Equivalent

The FS50R06KE3 chip is a N-channel IGBT and can be equivalently replaced by other similar IGBTs such as the Infineon FZ50R06KE3, Mitsubishi CM50DY-12NF, or the ON Semiconductor MCG50A6. Ensure to verify the specifications like voltage, current ratings, and thermal characteristics for compatibility in your specific application.

Features

The FS50R06KE3 is an IGBT (Insulated Gate Bipolar Transistor) module from Infineon Technologies, designed for high-performance applications in power electronics. Key features include:
1. Rated Current: 50A with a 600V voltage rating, suitable for medium voltage applications.
2. Low Conduction Losses: Enhanced efficiency through reduced switching and conduction losses, leading to lower thermal management requirements.
3. Short-Circuit Capability: Designed to handle short-circuit conditions, providing enhanced reliability in operation.
4. Thermal Management: Integrated heat sink design improves thermal performance and simplifies cooling considerations.
5. Fast Switching Speed: Allows for higher frequency operation, improving overall system efficiency and reducing size.
6. Integrated Diodes: Features anti-parallel diodes with low forward voltage drop, optimizing performance in inverter applications.
7. Robustness: Built to withstand harsh environments, ensuring durability and longevity.
These features make the FS50R06KE3 suitable for applications like motor drives, renewable energy systems, and industrial automation.

Pinout

The FS50R06KE3 is an IGBT (Insulated Gate Bipolar Transistor) module from the Infineon family, specifically designed for high-performance applications. It features a total of 6 pins.
The functions of these pins are as follows:
- Gate (G): Controls the switching of the IGBT, allowing it to turn on and off.
- Collector (C): Connects to the load, conducting the main current when the device is on.
- Emitter (E): Completes the circuit by returning current to the source; typically connected to ground.
This module is designed for applications in motor drives, industrial equipment, and renewable energy systems. Its robust design offers high efficiency and reliability in power switching applications.

Manufacturer

The FS50R06KE3 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in power semiconductors, microcontrollers, and sensors. Founded in 1999 as a spin-off from Siemens AG, Infineon plays a significant role in various markets, including automotive, industrial, and communication sectors.
The FS50R06KE3 is a part of Infineon’s IGBT (Insulated Gate Bipolar Transistor) product line, which is used for high-efficiency power conversion applications. Infineon focuses on developing innovative solutions for energy efficiency and renewable energy technologies, contributing to the global trend toward sustainable development. The company is known for its commitment to quality and has a strong presence in the automotive and industrial electronics sectors.

Application

The FS50R06KE3 is a power semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor) module. Its primary application areas include:
1. Motor Drives: Used in industrial motor control systems and variable frequency drives (VFDs).
2. Renewable Energy: Employed in solar inverters and wind power converters to manage power conversion.
3. HVAC Systems: Utilized in heating, ventilation, and air conditioning systems for efficient energy use.
4. UPS Systems: Integrated into uninterruptible power supplies for reliable backup power.
5. Welding Equipment: Used in electric arc welding applications for high-power control.
Its versatility makes it suitable for various high-power switching applications.

Package

The FS50R06KE3 is packaged in a DPAK (TO-252) format. This package type is known for its surface-mount design, providing good thermal performance and ease of handling in electronic applications.