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FQPF27P06
+NomenclaturePOWER FIELD-EFFECT TRANSISTOR, 1
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FabricantFairchild Semiconductor Inc
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Pièce fabricant #FQPF27P06
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Fiche technique FQPF27P06 DataSheet
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Package TO-220FP-3
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En stock7150
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Spécifications
| Attribut | Valeur |
| Package | Bulk |
| Series | QFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 17A (Tc) |
| RdsOn(Max)@IdVgs | 70mOhm @ 8.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 43 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1400 pF @ 25 V |
| PowerDissipation(Max) | 47W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220F-3 |
Présentation
Description
Key specifications of the FQPF27P06 include a drain-to-source voltage (Vds) rating of 60V and a continuous drain current (Id) rating of 27A. It typically has a low gate charge and a fast switching speed, which contributes to its efficiency in high-frequency applications. The FQPF27P06 is often packaged in a TO-220 style, which aids in effective heat dissipation during operation.
Its robust construction and reliability make it ideal for use in various industrial, automotive, and consumer electronics applications. When integrating the FQPF27P06 into a circuit, designers should consider appropriate gate drive voltage and thermal management to optimize performance and extend the device's lifespan.
Equivalent
1. IRF9540N
2. STP16PF06
3. FQP27P06
4. FQPF27P06-TU (variant with similar specs)
5. IXTP26P05T
When selecting an equivalent, ensure voltage, current, and package compatibility with your application.
Features
1. P-Channel Type: It utilizes a P-channel for operation.
2. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) of -60V and a continuous drain current (I_D) of -27A.
3. Low On-Resistance: Offers low R_DS(on) for improved efficiency in switching applications.
4. Package Type: Commonly available in an Insulated Gate Bipolar Transistor (IGBT) package.
5. Thermal Performance: Designed for efficient heat dissipation and reliable performance at higher temperatures.
6. Gate Threshold Voltage: Operates with a gate threshold voltage (V_GS) around -10V.
7. Applications: Suitable for use in power management, load switching, and DC-DC converters.
These features make the FQPF27P06 suitable for applications requiring efficient power handling and fast switching capabilities.
Pinout
1. Gate (G): The gate terminal is used to control the MOSFET's conduction state. Applying a voltage to the gate can turn the MOSFET on or off.
2. Drain (D): This is the terminal through which the main current flows when the MOSFET is turned on. In a P-channel MOSFET, current flows from the source to the drain.
3. Source (S): This terminal is connected to the negative side of the power supply in P-channel configurations. It is the terminal from which current enters the MOSFET when it is on.
The FQPF27P06 is designed for various applications, including power management and switching, due to its ability to handle high current and voltage levels efficiently.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and voltage regulation for efficient power distribution.
2. Switching Applications: Ideal for high-speed switching in power supplies and motor control circuits.
3. Load Switching: Suitable for battery-operated devices to manage load conditions.
4. Motor Drives: Utilized in controlling small motors in consumer electronics and automotive systems.
5. Inverters and Amplifiers: Employed in inverters for renewable energy systems and as amplifiers in audio and RF applications.
These applications benefit from its low on-resistance and fast switching capabilities.