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FQD2N100TM
+NomenclatureMOSFET N-CH 1000V 1.6A DPAK
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FabricantSemi - conducteurs
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Pièce fabricant #FQD2N100TM
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Package TO-252
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En stock5909
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | QFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1000 V |
| Current-ContinuousDrain(Id)@25°C | 1.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 9Ohm @ 800mA, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 520 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 50W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
Présentation
Description
This MOSFET is often employed in applications such as power supplies, lighting systems, and motor controls, where high voltage and fast switching are essential. Its robustness, combined with thermal efficiency, makes it suitable for both industrial and consumer electronics. Additionally, its reliability and performance in harsh environments are bolstered by its rugged construction. Overall, the FQD2N100TM is valued for its balance of performance, efficiency, and thermal management in high-voltage applications.
Equivalent
1. STMicroelectronics STP2NK100Z - Similar N-channel MOSFET with comparable voltage and current ratings.
2. ON Semiconductor NTP2N100 - Another alternative with similar specifications.
3. Vishay SIHP2N100E - Equivalent MOSFET with similar electrical characteristics.
Always verify specifications, such as Vds, Id, Rds(on), and package type, to ensure compatibility with your application.
Features
1. Voltage and Current: It supports a drain-source voltage (V_DS) of 1000V and a continuous drain current (I_D) of 1.7A.
2. Resistance: The device offers a low on-state resistance (R_DS(on)) of approximately 5 Ohms, which reduces power loss during operation.
3. Type: It is an N-channel MOSFET, making it suitable for applications requiring a high-speed switch.
4. Package: The MOSFET comes in a TO-251 package, offering a compact size for design flexibility.
5. Temperature: It operates effectively in a temperature range typically up to 150°C.
6. Applications: Suitable for high-voltage applications including power supplies, lighting, and motor control.
7. Gate Charge: It features a low gate charge, enhancing its efficiency in high-frequency applications.
These features make the FQD2N100TM a robust choice for various electronic applications requiring high voltage and efficient power management.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): The drain is the terminal through which the main current flows into the MOSFET when it is on. This pin is connected to the load in most applications.
3. Source (S): The source is where the current exits the MOSFET. It is typically connected to ground in common-source configurations.
These three pins enable the FQD2N100TM to function effectively as a switch or amplifier in electronic circuits.
Manufacturer
Application
1. Power Supply Circuits: Used in switch-mode power supplies for efficient power conversion.
2. Lighting Systems: Suitable for driving high-intensity discharge lamps or LED arrays.
3. Motor Control: Applied in controlling motors in industrial or consumer electronics.
4. Telecommunications: Utilized in equipment requiring high-voltage switching.
5. Renewable Energy Systems: Employed in solar inverters and wind turbine controllers.
6. Automotive: Used in electric vehicle systems for efficient energy management.
Its design ensures high-speed switching and low on-state resistance, ideal for these applications.