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FQD19N10LTM
+NomenclatureMOSFET N-CH 100V 15.6A DPAK
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FabricantSemi - conducteurs
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Pièce fabricant #FQD19N10LTM
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Fiche technique FQD19N10LTM DataSheet
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Package DPAK-3
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En stock6558
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 15.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 100mOhm @ 7.8A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 18 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 870 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 50W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
Présentation
Description
Key features of the FQD19N10LTM include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 19A. It provides a low on-state resistance (R_DS(on)) which ensures minimal power loss and heat generation during operation. The MOSFET comes in a DPAK (TO-252) package, which is suitable for surface mounting, enhancing its utility in space-constrained circuit designs.
The FQD19N10LTM is favored for its reliability and efficiency in high-speed switching applications, making it an essential component for power management in various electronic devices.
Equivalent
Features
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 100V and can handle a continuous drain current (I_D) of up to 19A.
2. R_DS(on): It has a low on-resistance, typically around 130 mΩ, which ensures efficient current flow and minimizes power loss when the MOSFET is in the "on" state.
3. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is generally around 2-4V, allowing for compatibility with standard logic levels for switching.
4. Package: This MOSFET is available in a TO-252 package, which offers a good balance between compact size and efficient heat dissipation.
5. Applications: It's suitable for applications like power supplies, motor controllers, and other systems requiring high-speed switching and efficient power conversion.
These features make the FQD19N10LTM a versatile choice for designers looking for reliability and efficiency in power management applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Voltage applied here determines whether the MOSFET is on or off.
2. Drain (D): The drain is where the current flows out of the MOSFET when it is in the 'on' state. It is the output terminal for the load current.
3. Source (S): This is the terminal through which current enters the MOSFET. It is typically connected to the ground in many applications.
The FQD19N10LTM is designed for use in power management and switching applications due to its ability to handle large amounts of current and voltage efficiently.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and switching regulators for efficient power conversion.
2. Motor Control: Employed in driving motors for industrial and consumer electronics.
3. Automotive Systems: Used in electronic control units and power distribution modules.
4. Telecommunications: Utilized in power amplification and signal switching.
5. Consumer Electronics: Found in power supplies and battery management systems for devices like laptops and smartphones.
Its low on-resistance and high-speed switching capabilities make it versatile for various high-efficiency applications.