FQD18N20V2TM

Images à titre indicatif uniquement

FQD18N20V2TM

+Nomenclature

MOSFET N-CH 200V 15A DPAK

  • FabricantSemi - conducteurs

  • Pièce fabricant #FQD18N20V2TM

  • Package TO-252-3

  • En stock3720

365 Garantie qualité 24h/24

7*24 Garantie de service 24h/24

90-Garantie après-vente 24h/24

Garantie produit authentique

Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series QFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain(Id) @ 25°C 15A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 140mOhm @ 7.5A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 26 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 1080 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA

Présentation

Description

The FQD18N20V2TM is an N-channel MOSFET from ON Semiconductor, designed for high-power applications. Key features include:
- Voltage Rating: 200V
- Current Rating: 18A (continuous)
- Low On-Resistance (RDS(on)): 0.18Ω (max)
- Fast Switching: Suitable for PWM and motor control
- Package: TO-252 (DPAK), surface-mount
It is commonly used in power supplies, DC-DC converters, and motor drivers due to its efficiency and thermal performance. The device includes built-in protection against overcurrent and thermal overload.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the FQD18N20V2TM (200V, 18A MOSFET) include:
- IRF540N (100V, 33A) – Lower voltage but higher current.
- STP16NF20 (200V, 16A) – Similar specs.
- IRF640N (200V, 18A) – Close match.
- FQP18N20 (200V, 18A) – Direct alternative.
Check datasheets for exact compatibility in your circuit.

Features

The FQD18N20V2TM is an N-channel MOSFET with the following key features:
- Voltage Rating: 200V
- Current Rating: 18A (continuous)
- Low On-Resistance (RDS(on)): 0.18Ω (max at VGS = 10V)
- Fast Switching: Optimized for high-speed applications
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- Avalanche Energy Rated: Improves ruggedness in inductive loads
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power supplies, motor control, DC-DC converters
This MOSFET is designed for high-performance power management with efficient thermal characteristics.

Pinout

The FQD18N20V2TM is a 200V, 18A N-channel MOSFET in a TO-252 (DPAK) package.
Pin Count: 3 pins
- Pin 1 (Gate - G): Controls the switching.
- Pin 2 (Drain - D): Connects to the load (high-voltage side).
- Pin 3 (Source - S): Ground/reference terminal.
Key Features:
- Low on-resistance (RDS(on)): ~0.15Ω (typ.)
- Fast switching for power applications.
- Avalanche-rated for robustness.
Commonly used in DC-DC converters, motor drives, and power management circuits.

Package

The FQD18N20V2TM is a PowerTrench MOSFET from ON Semiconductor, available in a TO-252 (DPAK) surface-mount package. This package type is compact, suitable for high-power applications, and features good thermal performance. It is commonly used in switching power supplies, motor control, and other high-efficiency circuits.

Produits liés à FQD18N20V2TM

  • Devis rapide

  • Envoyez votre demande de devis pour FQD18N20V2TM Utilisez ce formulaire. Nous vous répondrons sous 12 heures.