FQB5N90TM

Images à titre indicatif uniquement

FQB5N90TM

+Nomenclature

MOSFET N-CH 900V 5.4A D2PAK

  • FabricantSemi - conducteurs

  • Pièce fabricant #FQB5N90TM

  • Package TO-263

  • En stock6069

365 Garantie qualité 24h/24

7*24 Garantie de service 24h/24

90-Garantie après-vente 24h/24

Garantie produit authentique

Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series QFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain(Id) @ 25°C 5.4A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 2.3Ohm @ 2.7A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 40 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 1550 pF @ 25 V
Power Dissipation (Max) 3.13W (Ta), 158W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)

Présentation

Description

The FQB5N90TM is an N-channel MOSFET from ON Semiconductor, designed for high-voltage applications. Key features include:
- Voltage Rating: 900V, suitable for power switching.
- Current Rating: 5A (continuous drain current).
- Low On-Resistance (RDS(on)): Reduces conduction losses.
- Fast Switching: Optimized for efficiency in power supplies and inverters.
- Package: TO-220F (isolated tab), aiding thermal management.
Commonly used in AC-DC converters, LED drivers, and motor controls, it balances performance and reliability. Always refer to the datasheet for detailed specifications and application guidelines.

Equivalent

Equivalent products to the FQB5N90TM (5A, 900V MOSFET) include:
- STP5NK90Z (STMicroelectronics)
- IRFBE30 (Infineon)
- FQPF5N90C (Fairchild/ON Semi)
- 5N90 (various brands like Vishay)
These are similar N-channel MOSFETs with comparable voltage/current ratings. Verify datasheets for exact specs.

Features

The FQB5N90TM is a N-channel MOSFET with the following key features:
- Voltage Rating: 900V
- Current Rating: 5A (continuous)
- Low On-Resistance (RDS(on)): 1.5Ω (max) @ VGS = 10V
- Fast Switching Speed: Optimized for high-efficiency applications
- Avalanche Energy Rated: Enhances ruggedness in inductive loads
- Package: TO-220F (isolated tab for easier mounting)
- Low Gate Charge (Qg): Improves switching performance
Ideal for switching power supplies, LED drivers, and motor control due to its high voltage capability and efficiency.

Pinout

The FQB5N90TM is a N-channel MOSFET with the following key specifications:
- Pin Count: 3 (TO-220AB package: Gate, Drain, Source)
- Function: Power switching in applications like power supplies, motor control, and inverters.
- Voltage Rating: 900V (Drain-Source)
- Current Rating: 5A (Drain current at 25°C)
- Low On-Resistance (RDS(on)): ~1.35Ω (typ.)
Designed for high-voltage, high-efficiency switching, it features fast switching speeds and low gate charge.

Produits liés à FQB5N90TM

  • Devis rapide

  • Envoyez votre demande de devis pour FQB5N90TM Utilisez ce formulaire. Nous vous répondrons sous 12 heures.