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FQB33N10TM
+NomenclatureMOSFET N-CH 100V 33A D2PAK
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FabricantSemi - conducteurs
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Pièce fabricant #FQB33N10TM
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Fiche technique FQB33N10TM DataSheet
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Package SC-70-3
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En stock4638
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | QFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 33A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 52mOhm @ 16.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 51 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1500 pF @ 25 V |
| PowerDissipation(Max) | 3.75W (Ta), 127W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
Présentation
Description
The FQB33N10TM is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) widely used in electronic applications for switching and amplification. It is manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This MOSFET is designed to handle high current and voltage levels, making it suitable for power electronics.
Key features of the FQB33N10TM include:
1. High Current Capacity: It can handle a continuous drain current of up to 33A and a maximum drain-source voltage (Vds) of 100V.
2. Low On-Resistance: The low Rds(on) value ensures minimal power loss and high efficiency during operation.
3. Thermal Performance: It features excellent thermal characteristics, supported by its TO-220 package, which allows efficient heat dissipation.
4. Applications: Commonly used in applications such as motor drivers, DC-DC converters, power supplies, and other circuits requiring efficient power management and control.
This MOSFET is favored for its reliability, efficiency, and ability to operate in various high-power scenarios.
Key features of the FQB33N10TM include:
1. High Current Capacity: It can handle a continuous drain current of up to 33A and a maximum drain-source voltage (Vds) of 100V.
2. Low On-Resistance: The low Rds(on) value ensures minimal power loss and high efficiency during operation.
3. Thermal Performance: It features excellent thermal characteristics, supported by its TO-220 package, which allows efficient heat dissipation.
4. Applications: Commonly used in applications such as motor drivers, DC-DC converters, power supplies, and other circuits requiring efficient power management and control.
This MOSFET is favored for its reliability, efficiency, and ability to operate in various high-power scenarios.
Equivalent
The FQB33N10TM is an N-channel MOSFET. Equivalent products with similar specifications include:
1. IRF540N - International Rectifier
2. STP30N10 - STMicroelectronics
3. FDP33N25 - ON Semiconductor
4. NTE2394 - NTE Electronics
Ensure compatibility by checking datasheets, focusing on parameters like maximum drain-source voltage, continuous current, and Rds(on).
1. IRF540N - International Rectifier
2. STP30N10 - STMicroelectronics
3. FDP33N25 - ON Semiconductor
4. NTE2394 - NTE Electronics
Ensure compatibility by checking datasheets, focusing on parameters like maximum drain-source voltage, continuous current, and Rds(on).
Features
The FQB33N10TM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic applications. Here are its key features:
1. Voltage Rating: It has a drain-source voltage (V_DS) of 100V, making it suitable for medium to high voltage applications.
2. Current Rating: The continuous drain current (I_D) is approximately 33A, allowing it to handle substantial power loads.
3. Low On-State Resistance: The MOSFET offers a low R_DS(on), minimizing power loss and enhancing efficiency during operation.
4. Fast Switching Speed: It is designed for high-speed switching, which is beneficial in power conversion and motor drive applications.
5. TO-220 Package: The component typically comes in a TO-220 package, which provides good thermal performance and ease of mounting.
6. Safe Operating Area: The device features a robust design that supports reliable operation within specified limits.
These features make the FQB33N10TM suitable for use in power supply circuits, motor controllers, and various electronic devices requiring efficient power management.
1. Voltage Rating: It has a drain-source voltage (V_DS) of 100V, making it suitable for medium to high voltage applications.
2. Current Rating: The continuous drain current (I_D) is approximately 33A, allowing it to handle substantial power loads.
3. Low On-State Resistance: The MOSFET offers a low R_DS(on), minimizing power loss and enhancing efficiency during operation.
4. Fast Switching Speed: It is designed for high-speed switching, which is beneficial in power conversion and motor drive applications.
5. TO-220 Package: The component typically comes in a TO-220 package, which provides good thermal performance and ease of mounting.
6. Safe Operating Area: The device features a robust design that supports reliable operation within specified limits.
These features make the FQB33N10TM suitable for use in power supply circuits, motor controllers, and various electronic devices requiring efficient power management.
Pinout
The FQB33N10TM is an N-channel MOSFET. It typically comes in a TO-220 package, which generally has 3 pins. The pin count and functions for this package are as follows:
1. Gate (G): This pin is used to control the MOSFET's conduction state. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin is the terminal from which current exits the MOSFET after flowing through it.
These are the standard pin configurations for a TO-220 package housing an N-channel MOSFET like the FQB33N10TM. Always consult the datasheet for the most accurate information specific to the device's configuration and electrical characteristics.
1. Gate (G): This pin is used to control the MOSFET's conduction state. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin is the terminal from which current exits the MOSFET after flowing through it.
These are the standard pin configurations for a TO-220 package housing an N-channel MOSFET like the FQB33N10TM. Always consult the datasheet for the most accurate information specific to the device's configuration and electrical characteristics.
Manufacturer
The FQB33N10TM is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading semiconductor supplier specializing in a broad range of products including power and signal management, logic, discrete, and custom devices. The company serves a variety of sectors, including automotive, industrial, cloud power, and the Internet of Things (IoT). onsemi is known for its innovations in energy-efficient electronics and is deeply involved in advancing technologies that drive energy efficiency, sustainable infrastructure, and green energy solutions.
Application
The FQB33N10TM is a N-channel MOSFET commonly used in applications requiring efficient power management and switching. Key application areas include:
1. Power Supply Units: Utilized in DC-DC converters and switched-mode power supplies for efficient voltage regulation.
2. Motor Drives: Employed in controlling motors in both industrial and consumer electronics.
3. Battery Management: Used in battery protection circuits, enhancing the durability and efficiency of battery-operated devices.
4. LED Lighting: Integrated into LED driver circuits for stable and efficient operation.
5. Audio Amplifiers: Acts as a switch for audio amplification systems to deliver clear sound output.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
1. Power Supply Units: Utilized in DC-DC converters and switched-mode power supplies for efficient voltage regulation.
2. Motor Drives: Employed in controlling motors in both industrial and consumer electronics.
3. Battery Management: Used in battery protection circuits, enhancing the durability and efficiency of battery-operated devices.
4. LED Lighting: Integrated into LED driver circuits for stable and efficient operation.
5. Audio Amplifiers: Acts as a switch for audio amplification systems to deliver clear sound output.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
Package
The FQB33N10TM is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and comes in a TO-263 package, also known as D2PAK. This package is commonly used for surface-mount technology, offering good thermal performance suitable for power applications.
