FQB12P20TM

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FQB12P20TM

+Nomenclature

MOSFET P-CH 200V 11.5A D2PAK

  • FabricantSemi - conducteurs

  • Pièce fabricant #FQB12P20TM

  • Package D2PAK-3

  • En stock3071

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Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT)
Series QFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 11.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 470mOhm @ 5.75A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 40 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1200 pF @ 25 V
PowerDissipation(Max) 3.13W (Ta), 120W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK (TO-263)

Présentation

Description

The FQB12P20TM is a P-channel MOSFET from ON Semiconductor, designed for power management applications. Key features include:
- Voltage Rating: -20V
- Current Rating: -12A (continuous)
- Low On-Resistance (RDS(on)): 28mΩ (max) @ VGS = -10V
- Fast Switching: Suitable for DC-DC converters, load switches, and battery management
- Compact Package: PowerDI 123 (space-efficient)
It is optimized for high-efficiency, low-voltage systems such as portable electronics, power distribution, and motor control. The device offers low gate charge (Qg) and minimal conduction losses, enhancing performance in switching applications.
For detailed specs, refer to the datasheet from ON Semiconductor.

Equivalent

The FQB12P20TM is a P-channel MOSFET (20V, 12A). Equivalent alternatives include:
- IRF9Z34N (20V, 12A)
- FQP12P20 (20V, 12A)
- SI2301DS (20V, 12A)
- AO3401 (20V, 4.3A, lower current but common substitute)
Check datasheets for exact specs like RDS(on) and package compatibility. For higher current, consider IRF4905 (55V, 74A, but overkill for 20V).

Features

The FQB12P20TM is a P-channel MOSFET with the following key features:
- Voltage Rating: -20V (Drain-Source)
- Current Rating: -12A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 30mΩ (max) at VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Fast Switching Speed: Low gate charge (Qg) for efficient performance
- Power Dissipation: 40W (max)
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power management, load switching, DC-DC converters
This MOSFET is designed for high efficiency and reliability in compact power circuits.

Pinout

The FQB12P20TM is a P-channel MOSFET with the following key specifications:
- Pin Count: 3 (TO-252 / DPAK package: Gate (G), Drain (D), Source (S)).
- Function: Designed for power switching applications, featuring:
- -20V drain-source voltage (VDS)
- -12A continuous drain current (ID)
- Low on-resistance (RDS(on)) for efficient power handling.
- Commonly used in DC-DC converters, load switches, and motor control.
For exact pinout, refer to the datasheet.

Package

The FQB12P20TM is a PowerTrench MOSFET in a TO-220AB package. This package type is through-hole mounted, offering good thermal performance and ease of soldering. It is commonly used in power management applications. The TO-220AB package features a metal tab for heat dissipation, making it suitable for medium-power applications.

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