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FM25V20A-DGTR
+NomenclatureIC FRAM 2MBIT SPI 40MHZ 8DFN
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FabricantCypress Semiconductor Inc
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Pièce fabricant #FM25V20A-DGTR
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Fiche technique FM25V20A-DGTR DataSheet
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En stock6497
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Spécifications
| Attribut | Valeur |
| Series | F-RAM™ |
| Part Status | Active |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 2Mbit |
| Memory Organization | 256K x 8 |
| Memory Interface | SPI |
| Clock Frequency | 40 MHz |
| Voltage - Supply | 2V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-DFN (5x6) |
| Base Product Number | FM25V20 |
Présentation
Description
Key features include low write and read latency, endurance of over 10 trillion write cycles, and the ability to retain data without power for over 100 years. The FM25V20A-DGTR is ideal for applications requiring frequent data updates and retention, such as in industrial control systems, smart meters, and automotive electronics. Its small footprint (8-pin SOIC package) makes it suitable for compact designs. Overall, it provides an efficient and reliable solution for non-volatile memory needs in modern electronic applications.
Equivalent
Features
1. Voltage Range: Operates at 2.7V to 3.6V, suitable for low-power applications.
2. High Speed: Supports SPI clock rates up to 40 MHz, enabling fast data transfer.
3. Endurance: Capable of enduring up to 1 million write/erase cycles, making it reliable for frequent data updates.
4. Data Retention: Offers a data retention period of up to 100 years, ensuring long-term storage reliability.
5. Write Protection: Integrated hardware and software write protection features to enhance data security.
6. Low Power Consumption: Designed for low power usage in both active and standby modes, ideal for battery-operated devices.
7. Package Options: Available in an 8-pin SOIC and other packages for versatile integration into various designs.
These features make the FM25V20A-DGTR suitable for applications in automotive, industrial, and consumer electronics.
Pinout
The pin configuration and their functions are as follows:
1. VCC: Power supply (typically 2.7V to 3.6V).
2. GND: Ground reference.
3. SCK: Serial Clock input.
4. CS: Chip Select input, used to activate the device.
5. MOSI: Master Out Slave In, for data input to the device.
6. MISO: Master In Slave Out, for data output from the device.
7. HOLD: Hold pin, used to pause communications without deactivating the device.
8. WP: Write Protect pin, used to prevent write operations.
This device is commonly used in applications requiring non-volatile memory storage.
Manufacturer
The FM25V20A-DGTR itself is a non-volatile memory product, specifically a 2Mb (256K x 8) ferroelectric random-access memory (FeRAM), which offers advantages such as fast read and write speeds, low power consumption, and high endurance, making it suitable for applications that require reliable data storage without the need for continuous power supply. Overall, Fudan Microelectronics plays a significant role in the advancement of memory technologies and embedded applications.
Application
1. Consumer Electronics: In devices like cameras and smart appliances for configuration data storage.
2. Industrial Automation: For storing sensor calibration data and critical control parameters.
3. Automotive: In systems like engine control units for logging data and settings.
4. Medical Devices: For patient data storage in portable medical equipment.
5. Smart Meters: In utility meters for data logging and configuration.
Its fast write capabilities and durability make it suitable for these demanding environments.