FM25V20A-DGTR

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FM25V20A-DGTR

+Nomenclature

IC FRAM 2MBIT SPI 40MHZ 8DFN

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Spécifications

Attribut Valeur
Series F-RAM™
Part Status Active
Digi Key Programmable Not Verified
Memory Type Non-Volatile
Memory Format FRAM
Technology FRAM (Ferroelectric RAM)
Memory Size 2Mbit
Memory Organization 256K x 8
Memory Interface SPI
Clock Frequency 40 MHz
Voltage - Supply 2V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Supplier Device Package 8-DFN (5x6)
Base Product Number FM25V20

Présentation

Description

The FM25V20A-DGTR is a 2 Mb (256 K x 8) ferroelectric random access memory (FeRAM) device from Ramtron, designed for non-volatile data storage. It combines the speed of SRAM with the non-volatility of Flash memory. This device operates at a supply voltage of 2.7V to 3.6V and supports a high-speed serial interface (SPI), allowing for fast data access and low power consumption.
Key features include low write and read latency, endurance of over 10 trillion write cycles, and the ability to retain data without power for over 100 years. The FM25V20A-DGTR is ideal for applications requiring frequent data updates and retention, such as in industrial control systems, smart meters, and automotive electronics. Its small footprint (8-pin SOIC package) makes it suitable for compact designs. Overall, it provides an efficient and reliable solution for non-volatile memory needs in modern electronic applications.

Equivalent

The FM25V20A-DGTR is a 2-Mbit (256K x 8) ferroelectric RAM (FRAM) chip. Equivalent products include the Cypress (now Infineon) FM25V20, Microchip's M25P20, and STMicroelectronics' M95M02. Check specific datasheets for variations in pin configuration, voltage levels, and performance characteristics for precise compatibility.

Features

The FM25V20A-DGTR is a 2Mb (256Kb x 8) serial EEPROM featuring an SPI interface. Key features include:
1. Voltage Range: Operates at 2.7V to 3.6V, suitable for low-power applications.
2. High Speed: Supports SPI clock rates up to 40 MHz, enabling fast data transfer.
3. Endurance: Capable of enduring up to 1 million write/erase cycles, making it reliable for frequent data updates.
4. Data Retention: Offers a data retention period of up to 100 years, ensuring long-term storage reliability.
5. Write Protection: Integrated hardware and software write protection features to enhance data security.
6. Low Power Consumption: Designed for low power usage in both active and standby modes, ideal for battery-operated devices.
7. Package Options: Available in an 8-pin SOIC and other packages for versatile integration into various designs.
These features make the FM25V20A-DGTR suitable for applications in automotive, industrial, and consumer electronics.

Pinout

The FM25V20A-DGTR is a 2-Mbit (256K x 8) serial EEPROM (Electrically Erasable Programmable Read-Only Memory) that utilizes the SPI (Serial Peripheral Interface) protocol for communication. It has a pin count of 8 pins.
The pin configuration and their functions are as follows:
1. VCC: Power supply (typically 2.7V to 3.6V).
2. GND: Ground reference.
3. SCK: Serial Clock input.
4. CS: Chip Select input, used to activate the device.
5. MOSI: Master Out Slave In, for data input to the device.
6. MISO: Master In Slave Out, for data output from the device.
7. HOLD: Hold pin, used to pause communications without deactivating the device.
8. WP: Write Protect pin, used to prevent write operations.
This device is commonly used in applications requiring non-volatile memory storage.

Manufacturer

The FM25V20A-DGTR is manufactured by Fudan Microelectronics Group Co., Ltd. This company specializes in the design and production of various semiconductor products, including memory devices, microcontrollers, and integrated circuits. Founded in 2002 and based in Shanghai, China, Fudan Microelectronics is recognized for its innovative solutions in the semiconductor industry, catering to sectors such as consumer electronics, automotive, and communications.
The FM25V20A-DGTR itself is a non-volatile memory product, specifically a 2Mb (256K x 8) ferroelectric random-access memory (FeRAM), which offers advantages such as fast read and write speeds, low power consumption, and high endurance, making it suitable for applications that require reliable data storage without the need for continuous power supply. Overall, Fudan Microelectronics plays a significant role in the advancement of memory technologies and embedded applications.

Application

The FM25V20A-DGTR is a 20 Mb Ferroelectric Random Access Memory (FRAM) chip used primarily in applications requiring non-volatile storage with high endurance and low power consumption. Key application areas include:
1. Consumer Electronics: In devices like cameras and smart appliances for configuration data storage.
2. Industrial Automation: For storing sensor calibration data and critical control parameters.
3. Automotive: In systems like engine control units for logging data and settings.
4. Medical Devices: For patient data storage in portable medical equipment.
5. Smart Meters: In utility meters for data logging and configuration.
Its fast write capabilities and durability make it suitable for these demanding environments.

Package

The FM25V20A-DGTR is packaged in an SOIC-8 (Small Outline Integrated Circuit) type package. This 8-pin surface-mount package is commonly used for memory devices, allowing for efficient space utilization on printed circuit boards.

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