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FM24V01A-GTR
+NomenclatureIC FRAM 128KBIT I2C 3.4MHZ 8SOIC
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FabricantTechnologie Infineon
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Pièce fabricant #FM24V01A-GTR
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Fiche technique FM24V01A-GTR DataSheet
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En stock2664
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Spécifications
| Attribut | Valeur |
| Series | F-RAM™ |
| PartStatus | Active |
| DigiKeyProgrammable | Not Verified |
| MemoryType | Non-Volatile |
| MemoryFormat | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| MemorySize | 128Kbit |
| MemoryOrganization | 16K x 8 |
| MemoryInterface | I2C |
| ClockFrequency | 3.4 MHz |
| AccessTime | 130 ns |
| Voltage-Supply | 2V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
| SupplierDevicePackage | 8-SOIC |
| BaseProductNumber | FM24V01 |
Présentation
Description
Key features of the FM24V01A-GTR include a wide operating voltage range (2.7V to 3.6V), low power consumption, and high-speed data access (up to 1 MHz). It supports a standard SPI interface, making it easy to integrate into various microcontroller and embedded system designs. Applications commonly utilizing this FRAM include automotive electronics, smart meters, industrial automation, and consumer electronics, where reliability and data integrity are critical.
Equivalent
Features
1. Interface: Supports I2C communication, making it compatible with various microcontrollers and digital systems.
2. Voltage Range: Operates from 1.8V to 5.5V, allowing flexibility in power supply options.
3. Data Retention: Offers a minimum data retention period of 100 years, ensuring long-term reliability.
4. Write Endurance: Supports up to 1 million write cycles per memory cell, suitable for frequent data updates.
5. Fast Access: Provides fast read and write operations with an efficient internal architecture.
6. Page Write Capability: Allows page programming (up to 64 bytes), enhancing write efficiency.
7. Low Power Consumption: Features low active and standby currents, making it energy-efficient for battery-operated devices.
8. Temperature Range: Suitable for commercial applications, with operation typically from 0°C to 70°C.
These features make the FM24V01A-GTR ideal for applications such as consumer electronics, automotive, and industrial control systems.
Pinout
1. Vcc: Power supply voltage.
2. GND: Ground connection.
3. SDA: Serial data line for data input/output.
4. SCL: Serial clock line for synchronizing data transmission.
5. WP: Write protect pin; when asserted, it prevents writes to the memory.
6. HOLD: Hold pin; can be used to pause the communication without losing data.
7. A0: Address pin to select the device in multi-device configurations.
8. A1: Another address pin for device selection.
The FM24V01A-GTR operates with an I2C interface for communication, making it suitable for embedded applications requiring non-volatile memory with high endurance and fast write speeds.
Manufacturer
Fujitsu originated in Japan and has a long history in electronics and computing technology. The FM24V01A-GTR specifically is a non-volatile memory device that utilizes ferroelectric RAM (FRAM) technology. It is designed for applications requiring fast writing speeds, low power consumption, and high endurance.
As part of the broader Fujitsu Group, Fujitsu Semiconductor America operates within the semiconductor industry, emphasizing research and development to deliver cutting-edge solutions to meet the demands of modern electronics and digital systems.
Application
1. Industrial Automation: Storing configuration settings and parameters.
2. Consumer Electronics: Retaining user preferences in devices like TVs and remote controls.
3. Automotive: Non-volatile data logging and sensor calibration.
4. Medical Devices: Storing patient data safely and reliably.
5. Smart Cards and RFID: Secure data storage in financial and identification applications.
6. Telecommunications: Firmware storage and configuration in communication devices.
Its low power consumption and fast write capabilities make it suitable for these diverse applications.