FGH20N60SFD

Images à titre indicatif uniquement

FGH20N60SFD

+Nomenclature

  • FabricantSemi - conducteurs

  • Pièce fabricant #FGH20N60SFD

  • En stock2497

365 Garantie qualité 24h/24

7*24 Garantie de service 24h/24

90-Garantie après-vente 24h/24

Garantie produit authentique

Spécifications

Attribut Valeur
Packaging Tube
Brand onsemi
Product Type IGBT Transistors
Subcategory IGBTs
Maximum Gate Emitter Voltage - 20 V, 20 V
Factory Pack Quantity 450

Présentation

Description

The FGH20N60SFD is a high-voltage N-channel MOSFET designed for various power applications, particularly in switching and amplifier circuits. With a voltage rating of 600V and a current rating of 20A, it is suitable for high-efficiency energy conversion and control systems. The device features low on-resistance (Rds(on)), which allows for reduced power losses during operation, making it ideal for applications such as power supplies, motor drives, and inverters.
Key specifications include fast switching capabilities, high thermal stability, and robust performance under demanding conditions. The FGH20N60SFD is packaged in a TO-220 housing, facilitating effective heat dissipation. Its gate threshold voltage is low, ensuring quick response times, and the device is designed to handle high-frequency operations, enhancing its versatility in electronic designs. Overall, this MOSFET is a reliable choice for engineers looking to optimize performance in high-voltage circuits.

Equivalent

The FGH20N60SFD is an IGBT transistor. Equivalent products include:
1. FGH40N60SFD
2. FGH20N60SFA
3. FCP20N60
4. IRG4BC30KD
5. MGP30N60
Always verify specifications such as voltage, current ratings, and switching characteristics before substitution.

Features

The FGH20N60SFD is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 20A, allowing for efficient power conversion.
3. R_DS(on): Low on-resistance (typically around 0.18 ohms) ensures minimal power loss during operation, enhancing efficiency.
4. Gate Threshold Voltage: Designed for low gate drive voltage, it features a threshold voltage (V_GS(th)) of 2-4V, simplifying control circuitry.
5. Package Type: Offered in a TO-247 package, which provides good thermal performance and mechanical stability.
6. Fast Switching Speed: Ideal for applications requiring fast switching, such as converter circuits.
7. Thermal Resistance: Low thermal resistance helps manage heat dissipation effectively.
Overall, the FGH20N60SFD is well-suited for high-efficiency power electronics applications.

Pinout

The FGH20N60SFD is a N-channel MOSFET with a pin count of 3. The functions of the pins are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied at the gate turns the device on, allowing current to flow from the drain to the source when it is in the on state.
2. Drain (D): This is the terminal through which the load current flows when the MOSFET is on. It connects to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. The source terminal is the reference point for the gate voltage.
The FGH20N60SFD is designed for high voltage applications, rated for 600V with a maximum continuous current of 20A, making it suitable for power conversion applications.

Manufacturer

The FGH20N60SFD is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for its development and production of a wide range of semiconductor products, including power transistors, integrated circuits, and optoelectronics. The company specialized in providing solutions for various applications, including automotive, industrial, and consumer electronics.
ON Semiconductor, the parent company, is a global supplier of semiconductor-based solutions, providing energy-efficient innovations and a range of products that serve multiple markets. The company focuses on power management, analog, sensors, and connectivity solutions, aiming to improve energy efficiency and performance in electronic systems.
In summary, the FGH20N60SFD is produced by Fairchild Semiconductor, now part of ON Semiconductor, a company dedicated to providing semiconductor solutions across diverse industries.

Application

The FGH20N60SFD is an IGBT (Insulated Gate Bipolar Transistor) primarily used in high-power applications. Its main application areas include:
1. Motor Drives: Used in industrial motor control and drives for efficiency.
2. Inverters: Employed in solar inverters and UPS systems for converting DC to AC.
3. Switching Power Supplies: Utilized in power electronics for efficient energy conversion.
4. Welding Equipment: Applied in arc welding for high-performance control.
5. HVAC Systems: Used in compressors and fans for energy-efficient operations.
Its high voltage and current ratings make it suitable for these demanding applications.

Package

The FGH20N60SFD is typically packaged in a TO-247 form factor. This package type is designed for efficient heat dissipation and is commonly used for high-power applications such as power transistors and IGBTs.