FF200R17KE4

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FF200R17KE4

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Spécifications

Attribut Valeur
Mounting Style Screw Mount
Package / Case 62 mm
Technology Si
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Packaging Tray
Brand Infineon Technologies
Product Type IGBT Modules
Subcategory IGBTs
Configuration Dual
Series Trenchstop IGBT4 - E4
Product IGBT Modules
Factory Pack Quantity:Factory Pack Quantity 10
Part # Aliases SP000713374 FF200R17KE4HOSA1
Unit Weight 12 oz
Collector- Emitter Voltage VCEO Max 1.7 kV
Continuous Collector Current at 25 C 310 A
Maximum Gate Emitter Voltage 20 V
Tradename TRENCHSTOP
Collector-Emitter Saturation Voltage 1.95 V
Gate-Emitter Leakage Current 100 nA
Pd - Power Dissipation 1.25 kW

Présentation

Description

The FF200R17KE4 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-power applications. It belongs to the FFB series from Infineon Technologies, featuring a rated current of 200 A and a maximum voltage of 1700 V. The module employs a compact design, enhancing thermal management and efficiency, making it suitable for applications such as inverters, motor drives, and renewable energy systems.
Key features include low conduction and switching losses, robust thermal performance, and an integrated design that simplifies circuit layout. The FF200R17KE4 is typically used in industrial applications, including electric vehicles and power supply systems, where high efficiency and reliability are crucial.
Additionally, the module supports a variety of configurations, allowing for flexibility in design. Its performance characteristics make it a popular choice for engineers looking to optimize power conversion and control in demanding environments.

Equivalent

The FF200R17KE4 is an IGBT module from Infineon. Equivalent products include the Siemens 6MBI200S-120, Mitsubishi CM200DU-24F, and the ON Semiconductor FGH40N60SFD When selecting an equivalent, consider voltage, current ratings, and thermal characteristics to ensure compatibility with your application. Always verify specifications with the manufacturer's datasheets for precise replacement.

Features

The FF200R17KE4 is a power semiconductor device, specifically a N-channel IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency applications. Key features include:
1. Voltage Rating: 1700 V, allowing for robust performance in high-voltage applications.
2. Current Rating: 200 A, suitable for demanding power applications.
3. Low Switching Losses: Optimized design reduces energy losses during switching, enhancing overall system efficiency.
4. High Thermal Stability: Designed to operate in high-temperature environments, ensuring reliable performance.
5. Fast Switching Capability: Enables improved performance in applications requiring rapid on/off cycles.
6. Isolation: Provides electrical isolation, enhancing safety in circuit design.
7. Applications: Commonly used in industrial drives, renewable energy systems, and power supply units.
Overall, the FF200R17KE4 is ideal for applications requiring high power handling and efficiency.

Pinout

The FF200R17KE4 is a power semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor) from the Infineon IGBT module series. It typically features a pin count of 6, which includes gate, collector, and emitter terminals.
Pin Functions:
1. Gate (G): This terminal is used for controlling the switching of the IGBT. It receives the control signal.
2. Collector (C): This is the terminal through which the load current flows when the IGBT is turned on.
3. Emitter (E): This terminal serves as the output for the current, connecting to the ground or source.
This IGBT is designed for high-efficiency applications, such as inverters, motor drives, and power supplies, operating at a rated voltage of 1700V and a maximum continuous current of 200A. Its robust design makes it suitable for demanding industrial applications.

Manufacturer

The FF200R17KE4 is a power semiconductor module manufactured by Infineon Technologies AG. Infineon is a global leader in semiconductor solutions that focus on efficient energy management, automation, and connectivity. The company develops a wide range of products, including microcontrollers, sensors, and power semiconductors, which are used in various applications such as automotive, industrial, and communication technologies.
Infineon was founded in 1999 as a spin-off from Siemens AG and has since grown into a major player in the semiconductor industry, with a strong emphasis on innovation and sustainability. The FF200R17KE4 specifically is part of Infineon's IGBT (Insulated Gate Bipolar Transistor) module product line, designed for high power applications in areas such as renewable energy, motor drives, and industrial equipment. Infineon’s commitment to advancing technology positions it as a key contributor to the global transition toward more efficient and sustainable energy solutions.

Application

The FF200R17KE4 is an IGBT (Insulated Gate Bipolar Transistor) module commonly used in various applications, including:
1. Industrial Drives: Motor control for pumps, fans, and compressors.
2. Renewable Energy: Inverters for solar power systems and wind turbines.
3. UPS Systems: Uninterruptible power supplies for critical loads.
4. Traction Systems: Electric and hybrid vehicles, including trains and trams.
5. HVAC Systems: Variable frequency drives for heating, ventilation, and air conditioning.
6. Welding Equipment: Control circuits for arc and resistance welding.
Its high efficiency and reliability make it suitable for these high-power applications.

Package

The FF200R17KE4 is a IGBT module packaged in a standard dual in-line package (DIP) format, specifically designed for power applications. It typically features a heat sink for effective thermal management and is suitable for use in inverter and converter systems.

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