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FDS9933A
+NomenclatureMOSFET 2P-CH 20V 3.8A 8SOIC
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FabricantSemi - conducteurs
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Pièce fabricant #FDS9933A
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Package SOIC-8
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En stock7321
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 3.8A |
| Rds On(Max) @ Id Vgs | 75mOhm @ 3.8A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 10nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 600pF @ 10V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Présentation
Description
Key features of the FDS9933A include low on-resistance, which minimizes power loss and heat generation, making it suitable for high-efficiency applications. It typically operates at a voltage of 20V and can handle a continuous drain current of around 6.5A per channel, depending on the application's heat dissipation capabilities. The FDS9933A is encapsulated in a compact SO-8 package, which is suitable for space-constrained designs.
The MOSFET supports fast switching speeds, enhancing performance in high-frequency circuits. Its dual-channel design allows for more compact circuit layouts by integrating two transistors into a single package, simplifying design and reducing component count. Overall, the FDS9933A is valued for its reliability, efficiency, and compact form factor in various electronic applications.
Equivalent
1. SI9933A - by Vishay Siliconix
2. IRF7329 - by Infineon Technologies (formerly International Rectifier)
3. BSS84 - by Diodes Incorporated
4. AO9933 - by Alpha & Omega Semiconductor
Always verify pin configuration and electrical characteristics to ensure compatibility in your specific application.
Features
1. Low On-Resistance: This feature ensures minimal power loss and efficient current conduction, contributing to improved overall system efficiency.
2. High-Speed Switching: Enables quick transition times, which is beneficial for applications requiring fast response times.
3. Low Gate Charge: Reduces the power required to drive the gate, enhancing the efficiency of the MOSFET in switching applications.
4. Compact Package: Typically available in a small SO-8 package, allowing for space-efficient designs.
5. Thermal Performance: Good thermal characteristics to handle heat dissipation efficiently, which is crucial for maintaining reliability and performance under load.
6. Applications: Often used in DC-DC converters, load switches, and other applications where efficient power handling is necessary.
These features make the FDS9933A suitable for a wide range of electronic applications requiring efficient power management and compact design.
Pinout
1. Pin 1 (Source 1 - S1): This is the source terminal for the first MOSFET.
2. Pin 2 (Gate 1 - G1): This is the gate terminal for the first MOSFET.
3. Pin 3 (Source 2 - S2): This is the source terminal for the second MOSFET.
4. Pin 4 (Gate 2 - G2): This is the gate terminal for the second MOSFET.
5. Pin 5, 6, 7, 8 (Drain 1 & Drain 2 - D1/D2): These are the drain terminals for both the MOSFETs, typically connected internally.
The FDS9933A is used for switching applications and is optimized for low on-resistance to provide efficient power delivery.