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FDS6575
+NomenclatureMOSFET P-CH 20V 10A 8SOIC
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FabricantSemi - conducteurs
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Pièce fabricant #FDS6575
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Fiche technique FDS6575 DataSheet
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En stock21221
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Spécifications
| Attribut | Valeur |
| Series | PowerTrench® |
| PartStatus | Obsolete |
| BaseProductNumber | FDS65 |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 10A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@Id,Vgs | 13mOhm @ 10A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 74 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 4951 pF @ 10 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Présentation
Description
Students will likely engage with both theoretical concepts and practical applications, learning how to utilize various tools and technologies pertinent to the field. The course may include lectures, hands-on projects, and collaborative assignments to reinforce learning outcomes. Additionally, FDS6575 often aims to develop critical thinking and problem-solving skills, preparing students for complex challenges in professional environments.
Overall, FDS6575 is intended for those with a foundational knowledge in data science or a related discipline, and it seeks to deepen their expertise and prepare them for advanced roles in the industry or academia.
Equivalent
1. IRF530 - from International Rectifier.
2. NTE2392 - from NTE Electronics.
3. STP55NF06 - from STMicroelectronics.
4. 2N7002 - for lighter applications.
5. SI2302 - from Vishay, for similar low-voltage applications.
Ensure to compare key specifications like voltage, current ratings, and RDS(on) to find the best fit.
Features
1. N-Channel MOSFET: It is an N-channel enhancement mode field-effect transistor, which is commonly used in power switching applications.
2. Low On-Resistance: The device features a low on-resistance, which reduces power loss during operation, improving efficiency.
3. High-Speed Switching: The FDS6575 is designed for fast switching, making it suitable for applications requiring quick on and off control.
4. SO-8 Package: It comes in a compact, surface-mount SO-8 package, which is ideal for high-density circuit designs.
5. Low Gate Charge: The MOSFET has a low gate charge, which reduces the amount of power necessary to drive it, optimizing performance in power-sensitive applications.
6. Thermal Performance: It offers good thermal performance, essential for reliable operation in demanding environments.
These features make the FDS6575 suitable for a variety of applications, including DC-DC converters, power management systems, and motor drives.
Pinout
1. Drain (D): 3 pins (Pins 5, 6, 7)
2. Source (S): 3 pins (Pins 1, 2, 3)
3. Gate (G): 1 pin (Pin 4)
4. Drain (D): 1 pin (Pin 8)
The function of the FDS6575 is to switch and amplify electronic signals in power management circuits. The MOSFET operates as a switch, controlling the flow of electricity between the drain and source terminals. The gate terminal modulates whether the switch is on or off, based on its voltage. This MOSFET is often used in DC-DC converters, power supplies, and load switches due to its fast switching speed and high efficiency.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and switch-mode power supplies for efficient power conversion.
2. Motor Control: Employed in motor drivers and controllers for precise speed and torque regulation.
3. Lighting: Utilized in LED drivers for controlling brightness and power consumption.
4. Load Switching: Functions as an electronic switch in various circuits for controlling loads.
5. Amplification: Acts as an amplifier in RF transmission and other applications requiring signal amplification.
6. Battery Protection: Used in battery protection circuits to prevent overcharging and over-discharging.
These applications leverage the MOSFET’s efficiency, fast switching speed, and reliability.