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FDN340P
+NomenclatureSMALL SIGNAL FIELD-EFFECT TRANSI
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FabricantFairchild Semiconductor Inc
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Pièce fabricant #FDN340P
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Fiche technique FDN340P DataSheet
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Package SSOT-3
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En stock3986
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Spécifications
| Attribut | Valeur |
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 2A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 70mOhm @ 2A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 10 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 779 pF @ 10 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Die |
Présentation
Description
In a broader educational context, an introductory course with a code like FDN340P might cover foundational principles, techniques, or methodologies pertinent to its discipline. If it's part of a progression, it could build upon lower-level prerequisite courses, offering deeper insights or more complex practical applications. Students interested in enrolling should ensure they meet any prerequisites, and they may consider reaching out to academic advisors or instructors for more detailed descriptions and expectations of the course content.
Equivalent
1. SI3460DV (Vishay)
2. 2N7002P (Fairchild/Nexperia)
3. IRLML6402 (International Rectifier)
4. PMV16XNR (Nexperia)
5. BSS84 (ON Semiconductor)
When selecting an equivalent, ensure the substitute meets the required voltage, current, and power ratings of your application. Always consult the datasheets for compatibility.
Features
1. Configuration: P-channel enhancement mode MOSFET.
2. Voltage and Current Ratings: Typically supports a drain-source voltage (V_DS) of -25V and a continuous drain current (I_D) of approximately -3.7A.
3. Low On-Resistance: Offers low R_DS(on) values, which reduce power losses and increase efficiency in applications.
4. Package: Often available in a compact SOT-23 package, suitable for space-constrained applications.
5. Gate-Source Voltage: Usually operates with a gate-source threshold voltage (V_GS(th)) around -1V to -3V.
6. Thermal Performance: Designed to handle heat dissipation efficiently with a maximum junction temperature typically around 150°C.
7. Applications: Ideal for load switching, power management in portable devices, and DC-DC converters.
8. Fast Switching: Provides quick switching speeds suitable for high-frequency applications.
These features make the FDN340P a reliable choice for designers looking to implement efficient power management and signal switching in their electronic designs.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to this pin, the MOSFET is turned on or off.
2. Source (S): This pin is typically connected to the negative side of the load or power supply in a P-channel MOSFET. Current flows from the source to the drain when the MOSFET is turned on.
3. Drain (D): This pin is connected to the load. When the MOSFET is turned on, current flows from the source to the drain.
The FDN340P is used in various applications for switching and amplification purposes due to its ability to handle relatively high currents and voltages.