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FDMS86200
+NomenclatureMOSFET N-CH 150V 9.6A/35A 8PQFN
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FabricantSemi - conducteurs
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Pièce fabricant #FDMS86200
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Package TDFN-8
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En stock2248
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 9.6A (Ta), 35A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 18mOhm @ 9.6A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 46 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2715 pF @ 75 V |
| Power Dissipation (Max) | 2.5W (Ta), 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
Présentation
Description
Key features of the FDMS86200 include a low on-resistance, fast switching speed, and high efficiency, which contribute to reduced power losses and improved thermal performance. Its ability to handle high currents and voltages makes it ideal for use in high-power applications. The device often comes in a compact package, allowing for space-efficient designs in various electronic circuits.
The FDMS86200 is also known for its robustness, offering reliability in harsh conditions, which is essential for industrial and automotive applications. Its advanced construction enables it to perform efficiently in both high-frequency and high-power environments, supporting both analog and digital circuits. Overall, the FDMS86200 is a versatile and high-performance component widely used in modern electronic systems.
Equivalent
1. IRF540N - From Infineon Technologies, suitable for various applications.
2. STP55NF06 - From STMicroelectronics, often used in power management.
3. FQP30N06L - From ON Semiconductor, with similar specifications.
Please verify the specifications to ensure compatibility with your specific application.
Features
1. Low On-Resistance: The device offers a low R_DS(on), minimizing power loss and improving efficiency.
2. Fast Switching Performance: Designed for high-speed switching applications, it reduces transition losses.
3. Thermal Efficiency: The package is optimized for excellent thermal performance, helping to dissipate heat effectively.
4. Compact Package: Available in an industry-standard package, it supports space-constrained applications.
5. Robust Design: It provides a high level of ruggedness and reliability, suitable for various demanding environments.
These features make the FDMS86200 suitable for applications like DC-DC converters, motor drives, and other power management systems where efficiency and reliability are essential.
Pinout
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate regulates the current flow between the drain and source.
2. Drain (D) - This pin is the terminal through which the main current flows into the MOSFET when it is in the 'on' state.
3. Source (S) - This pin is the terminal through which the current exits the MOSFET.
The FDMS86200 is designed to handle significant levels of current and voltage, making it suitable for high-efficiency power conversion purposes. Always refer to the datasheet for detailed specifications and usage guidelines.
Manufacturer
Application
1. DC-DC Converters: Enhances efficiency in converting voltage levels.
2. Power Supplies: Used in both AC-DC and DC-DC power supplies for improved performance.
3. Motor Drives: Supports efficient control in motor applications.
4. Battery Management: Aids in battery charging and discharging systems for better energy usage.
5. Telecommunications: Supports power regulation in communication equipment.
6. Consumer Electronics: Used in devices for efficient power control and management.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.