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FDMS86181
+NomenclatureMOSFET N-CH 100V 44A/124A 8PQFN
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FabricantSemi - conducteurs
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Pièce fabricant #FDMS86181
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Package PowerTDFN-8
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En stock2822
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 44A (Ta), 124A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 4.2mOhm @ 44A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 59 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4125 pF @ 50 V |
| PowerDissipation(Max) | 2.5W (Ta), 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
Présentation
Description
Key features of the FDMS86181 include low on-resistance, which reduces power dissipation and improves efficiency, and a fast switching speed, making it suitable for high-frequency applications. The MOSFET is typically housed in a compact package, facilitating integration into various electronic devices where space is a constraint.
Additionally, it may include features like ESD (Electrostatic Discharge) protection and enhanced thermal management, which contribute to its reliability and longevity in demanding environments. Understanding the specifications and operational parameters of the FDMS86181 is crucial for engineers looking to optimize power efficiency and performance in their electronic designs.
Equivalent
1. Infineon BSC014N06NS
2. ON Semiconductor NTMFS5C604NL
3. Vishay SiRA14DP
4. STMicroelectronics STL60N6F7
Ensure to verify the datasheets for precise electrical characteristics and package compatibility to confirm suitability for your application.
Features
1. N-Channel MOSFET: This component is an N-channel enhancement mode MOSFET, suitable for various switching applications.
2. Voltage and Current Ratings: It typically features a high voltage rating (e.g., 30V) and a significant current handling capability (e.g., 13A), making it suitable for power management tasks.
3. Low On-Resistance: It has a low on-resistance (R_DS(on)), which reduces power loss and improves efficiency in power switching applications.
4. Advanced Package: It often comes in a compact, thermally efficient package such as the SO-8 or similar, ensuring reliable performance in space-constrained applications.
5. Fast Switching Speed: The MOSFET is designed to offer rapid switching speeds, enhancing performance in high-frequency applications.
6. Thermal Performance: It includes features for optimal thermal management, ensuring stability and reliability under various operational conditions.
These features make the FDMS86181 suitable for use in DC-DC converters, load switches, and other power management roles.
Pinout
The FDMS86181 typically features 8 pins, although the exact pin count and layout can vary slightly depending on the specific package variant. The general function of the pins in a MOSFET like the FDMS86181 includes:
1. Source (S) - Provides the source current.
2. Gate (G) - Controls the switching operation of the MOSFET.
3. Drain (D) - Where the output current flows out.
The FDMS86181 is used for low-voltage applications and is designed for high efficiency and fast switching. It is commonly used in power management applications, including DC-DC converters, load switches, and other circuits that require efficient power handling. Always refer to the specific datasheet for the most accurate pin configuration and functional descriptions.
Manufacturer
Application
1. DC-DC Converters: Efficient power conversion in portable devices, computing, and telecommunications.
2. Load Switches: Used in battery-operated devices to manage power supply efficiently.
3. Motor Drives: Suitable for driving small motors in consumer electronics.
4. Lighting: Utilized in LED drivers and other lighting solutions.
5. Power Supplies: Incorporated in power supply units for various electronic devices to enhance efficiency.
Its low on-resistance and fast switching capabilities make it ideal for applications requiring efficient power management and thermal performance.