Images à titre indicatif uniquement
FDMS7682
+NomenclaturePOWER FIELD-EFFECT TRANSISTOR, 1
-
FabricantFairchild Semiconductor Inc
-
Pièce fabricant #FDMS7682
-
Fiche technique FDMS7682 DataSheet
-
Package TDFN-8
-
En stock1829
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Package / Case | Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 16A (Ta), 22A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 6.3mOhm @ 14A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 30 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1885 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta), 33W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
Présentation
Description
Key characteristics of the FDMS7682 include a low on-resistance (R_DS(on)), which minimizes energy loss during operation and thereby enhances overall system efficiency. Its compact design helps in reducing the size of power management circuitry, making it suitable for use in portable and space-constrained devices.
Additionally, the FDMS7682 is designed to withstand high voltages and currents, making it robust for demanding environments. It may also feature built-in protection mechanisms, such as over-temperature and over-current protection, which help in prolonging the lifespan of the device while maintaining stable operation. This makes it a popular choice for designers looking to optimize performance and reliability in electronic systems.
Equivalent
1. Infineon BSC010N04LS - Offers similar voltage and current ratings.
2. Vishay SiR800DP - Comparable specifications in terms of RDS(on) and current handling.
3. NXP PSMN1R2-40YLD - Close match in voltage and current capabilities.
4. STMicroelectronics STL110N4LF7 - Alternative with similar electrical characteristics.
Always verify the exact specifications and compatibility for your specific application.
Features
1. N-Channel MOSFET: It is an N-channel MOSFET, which is typical for applications requiring efficient power conversion and switching.
2. High Efficiency: Designed with low RDS(on) to minimize conduction losses, enhancing overall efficiency in power applications.
3. Voltage and Current Ratings: Supports a range of voltage and current ratings suitable for various power supply designs.
4. Thermal Performance: Offers excellent thermal performance, allowing it to operate efficiently under high-temperature conditions.
5. Compact Package: Available in a compact package, aiding in space-constrained designs and enabling higher-density power solutions.
6. Fast Switching Speed: Capable of fast switching, which reduces switching losses and enhances performance in high-frequency applications.
7. Robust Design: Built with robust construction to handle high-stress environments, increasing reliability and longevity.
These features make the FDMS7682 suitable for applications in computing, telecommunications, and consumer electronics where efficiency and performance are critical.
Pinout
Here is a brief overview of the pin functions:
1. Drain (D): The drain terminals are typically connected internally, and for an 8-pin SOIC package, usually, multiple pins (often pins 5, 6, 7, and 8) are dedicated to the drain. This helps in reducing the on-resistance and improving thermal performance.
2. Gate (G): The gate is the control terminal of the MOSFET. In the FDMS7682, this is typically pin 4.
3. Source (S): The source terminal is usually connected to the ground or the load. In a standard configuration, pins 1, 2, and 3 are used as the source.
This configuration allows for efficient power management and is suitable for high-efficiency load switching applications. Always refer to the specific datasheet for the most accurate and detailed information regarding pin configuration and electrical characteristics.