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FDMC8010
+NomenclatureMOSFET N-CH 30V 30A/75A POWER33
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FabricantSemi - conducteurs
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Pièce fabricant #FDMC8010
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Fiche technique FDMC8010 DataSheet
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En stock2680
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Spécifications
| Attribut | Valeur |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5860 pF @ 15 V |
| Power Dissipation (Max) | 2.4W (Ta), 54W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Power33 |
| Package / Case | 8-PowerWDFN |
| Base Product Number | FDMC80 |
Présentation
Description
Equivalent
Features
1. Low On-Resistance (RDS(on)): Offers low resistance to minimize conduction losses, enhancing efficiency in power applications.
2. High Voltage Rating: Typically supports voltage ratings up to 30V, suitable for various power supply circuits.
3. Fast Switching Speed: Enables efficient operation in high-frequency applications, reducing switching losses.
4. Thermal Performance: Designed with a low thermal resistance, allowing for better heat dissipation during operation.
5. Compact Package: Available in a compact surface-mount package (usually SO-8), facilitating space-saving designs in PCBs.
6. High Current Handling: Capable of handling significant continuous drain current, making it ideal for power-intensive applications.
7. Gate Threshold Voltage: Features a low gate threshold voltage, ensuring effective turn-on characteristics.
These features make the FDMC8010 suitable for applications in DC-DC converters, power management, and other electronic devices requiring efficient power handling.
Pinout
Here’s a brief overview of the pin functions:
1. Gate1 (G1): Controls the first N-channel MOSFET.
2. Drain1 (D1): Drain terminal for the first N-channel MOSFET.
3. Source1 (S1): Source terminal for the first N-channel MOSFET.
4. Gate2 (G2): Controls the second N-channel MOSFET.
5. Drain2 (D2): Drain terminal for the second N-channel MOSFET.
6. Source2 (S2): Source terminal for the second N-channel MOSFET.
7. Common Source (CS): Common source for both MOSFETs (optional).
8. N/C (Not Connected): Typically left unconnected.
This configuration allows for efficient switching and control in various electronic applications.