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FDMA510PZ
+NomenclatureMOSFET P-CH 20V 7.8A 6MICROFET
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FabricantSemi - conducteurs
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Pièce fabricant #FDMA510PZ
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Package VDFN-6
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En stock6742
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 7.8A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 30mOhm @ 7.8A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 27 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 1480 pF @ 10 V |
| Power Dissipation (Max) | 2.4W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-MicroFET (2x2) |
Présentation
Description
FDMA510PZ might cover the principles of FDMA, its implementation in various communication systems, design considerations, and its advantages and limitations compared to other access methods like TDMA (Time Division Multiple Access) and CDMA (Code Division Multiple Access). The course could also explore practical applications, historical significance, and how FDMA integrates with current technologies and protocols. Understanding FDMA is crucial for professionals in telecommunications, as it lays the groundwork for comprehending more advanced multiple access strategies and the evolution of communication technologies.
Equivalent
1. IRF9540N by Infineon (formerly International Rectifier)
2. SI4435DDY by Vishay
3. FDS4465 by Fairchild Semiconductor (now part of ON Semiconductor)
Always verify specifications such as voltage, current ratings, package type, and Rds(on) to ensure the substitute is suitable for your application.
Features
1. Package Type: It comes in a compact Power33 package which is suitable for high-density PCB designs.
2. Voltage and Current Ratings: The MOSFETs are rated for a drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of approximately 4.2A.
3. Low On-Resistance: It offers a low R_DS(on), which reduces power loss and improves efficiency in switching applications.
4. Fast Switching Speed: Designed for high-speed operation, this MOSFET supports quick switching, minimizing transition losses.
5. Thermal Efficiency: The package design contributes to better thermal performance, allowing for effective heat dissipation.
6. Applications: Primarily used in DC-DC converters, load switching, and battery management systems, among other power management applications.
7. RoHS Compliance: It complies with environmental standards, being lead-free and adhering to RoHS directives.
These features make the FDMA510PZ suitable for compact, energy-efficient design requirements in various electronic applications.
Pinout
1. Source (S1, S2): Two pins for the source of each MOSFET.
2. Gate (G1, G2): Two pins for the gate control of each MOSFET.
3. Drain (D1, D2): Two pins for the drain of each MOSFET.
The remaining pins are often connected to the metal pad or serve as additional connections for the source or drain, helping with heat dissipation and electrical connectivity. This package is designed to provide efficient power management in compact spaces, making it suitable for applications such as load switching, DC-DC converters, and battery management. Always refer to the specific datasheet for precise pin configuration, as this can vary with different manufacturers or revisions.
Manufacturer
Application
1. Power Management: Utilized in DC-DC converters and voltage regulation modules.
2. Motor Control: Suitable for driving motors in industrial and consumer applications.
3. Switching Applications: Ideal for use in load switch circuits and power distribution.
4. Automotive: Employed in automotive electronic systems for its robustness.
5. Consumer Electronics: Used in devices requiring efficient power management like laptops and smartphones.
These application areas benefit from the FDMA510PZ’s low on-resistance and high-speed switching capabilities.