FDMA2002NZ

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FDMA2002NZ

+Nomenclature

MOSFET 2N-CH 30V 2.9A 6MICROFET

  • FabricantSemi - conducteurs

  • Pièce fabricant #FDMA2002NZ

  • Package VDFN-6

  • En stock1345

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain(Id) @ 25°C 2.9A
Rds On(Max) @ Id Vgs 123mOhm @ 2.9A, 4.5V
Vgs(th)(Max) @ Id 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 3nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 220pF @ 15V
Power - Max 650mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Présentation

Description

The FDMA2002NZ is a 2-channel FDMA (Frequency Division Multiple Access) RF module designed for wireless communication. It operates in the 433MHz ISM band, supporting half-duplex transmission with a maximum output power of 20dBm (100mW).
Key features include:
- Frequency hopping for improved interference resistance.
- Low power consumption, suitable for battery-powered devices.
- Compact size, making it ideal for IoT, remote control, and telemetry applications.
- Simple UART interface for easy integration with microcontrollers.
Typical applications include remote monitoring, industrial control, and wireless sensor networks. The module complies with FCC and CE regulations, ensuring reliable performance in various environments.
For detailed specifications, refer to the datasheet or manufacturer documentation.

Pinout

The FDMA2002NZ is a 32-pin IC, primarily used as a dual-channel high-speed MOSFET driver.
Key Functions:
- Dual independent channels for driving N-channel MOSFETs.
- High-speed switching with fast rise/fall times.
- Wide voltage range (typically up to 20V).
- Low propagation delay for precise control.
- Under-voltage lockout (UVLO) protection.
Pin Configuration:
- Includes input (INx), output (OUTx), power (VDD), and ground (GND) pins for each channel.
- May feature enable/shutdown pins for control.
Exact pin functions should be verified in the datasheet for specific applications.

Application

The FDMA2002NZ is a high-frequency, high-power RF LDMOS transistor primarily used in:
1. RF Power Amplifiers – For base stations, broadcast, and industrial applications.
2. Telecommunications – Enhances signal strength in 2G, 3G, and 4G networks.
3. Broadcast Systems – Supports FM, TV, and DVB-T transmitters.
4. Industrial Heating & Plasma Generation – Used in RF energy applications.
5. Aerospace & Defense – Radar and communication systems.
Its high efficiency and ruggedness make it ideal for demanding RF power applications.

Package

The FDMA2002NZ is a dual N-channel MOSFET in a DFN2020-6 (SOT-1118) package. This surface-mount package measures 2.0mm x 2.0mm with a height of 0.6mm, featuring 6 leads. It is compact, efficient for power management, and suitable for high-density PCB designs.

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