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FDD6637
+NomenclatureMOSFET P-CH 35V 13A/55A DPAK
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FabricantSemi - conducteurs
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Pièce fabricant #FDD6637
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Fiche technique FDD6637 DataSheet
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Package TO-252-3
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En stock5049
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 35 V |
| Current - Continuous Drain(Id) @ 25°C | 13A (Ta), 55A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 11.6mOhm @ 14A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 63 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 2370 pF @ 20 V |
| Power Dissipation (Max) | 3.1W (Ta), 57W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Présentation
Description
The course likely covers foundational concepts and methodologies pertinent to its focus area. Students can expect to engage with theoretical frameworks, practical applications, and possibly research components. The introduction aims to equip students with a comprehensive understanding of the subject, preparing them for more specialized courses or professional applications.
For precise information regarding syllabus, objectives, and prerequisites, one should refer to the institution's academic catalog or contact the course instructor directly, as course content can significantly differ between academic programs.
Equivalent
1. IRF530 from International Rectifier
2. IRF540from Vishay
3. NTD4906N from ON Semiconductor
4. AOD4184 from Alpha & Omega Semiconductor
5. Si4470DY from Vishay
These alternatives might not be direct drop-in replacements but share similar electrical characteristics. Always check the datasheets for compatibility with your specific application.
Features
1. Type: N-channel MOSFET.
2. Voltage Rating: It generally operates at a drain-source voltage (V_DS) of 30V.
3. Current Rating: It has a continuous drain current (I_D) capability of approximately 30A.
4. R_DS(on): The on-resistance is typically low, around 0.012 ohms, which enhances efficiency by reducing power loss.
5. Package: It is often available in standard packages like the TO-252, which is suitable for surface mounting.
6. Thermal Performance: The design supports efficient thermal management, which is critical for high-power applications.
7. Applications: Commonly used in DC-DC converters, load switching, and other power management circuits.
These features make the FDD6637 suitable for applications requiring efficient power handling and robust performance in compact form factors.
Pinout
1. Pins 1, 2, 3: Source (S) - These are the source terminals for the MOSFET. They are typically connected to the ground in most applications.
2. Pin 4: Gate (G) - This terminal is used to control the MOSFET. A voltage applied here determines whether the MOSFET is turned on or off.
3. Pins 5, 6, 7, 8: Drain (D) - These are the drain terminals of the MOSFET, through which the main current flows when the device is on.
The FDD6637 is used for switching and amplification in power management applications due to its low on-state resistance and high efficiency.
Manufacturer
Onsemi was originally part of Motorola as its Semiconductor Components Group, before being spun off as an independent company. It has since grown through acquisitions and strategic developments to become a key player in the semiconductor industry. The company focuses on providing solutions that enable energy-efficient innovations, helping reduce global energy use.