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FDD18N20LZ
+NomenclatureMOSFET N-CH 200V 16A DPAK
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FabricantSemi - conducteurs
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Pièce fabricant #FDD18N20LZ
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Package TO-252-3
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En stock5099
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | UniFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 16A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V |
| Rds On(Max) @ Id Vgs | 125mOhm @ 8A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 40 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1575 pF @ 25 V |
| Power Dissipation (Max) | 89W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Présentation
Description
The FDD18N20LZ is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in electronic circuits requiring efficient power management. It is known for its high-speed switching capabilities and low on-resistance, making it suitable for applications such as power supplies, DC-DC converters, and motor controllers.
Key features of the FDD18N20LZ include:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of around 18A, depending on the specific package and cooling conditions.
2. Low On-Resistance: This MOSFET offers a low on-state resistance (R_DS(on)), which reduces power losses and improves efficiency in power conversion applications.
3. Package Options: Often available in standard TO-220 or DPAK packages, facilitating easy integration into various circuit designs.
4. Thermal Performance: It is designed to handle significant power dissipation with proper heatsinking, ensuring reliable operation under high-load conditions.
This component is typically used in consumer electronics, automotive applications, and industrial equipment where efficient power management is crucial.
Key features of the FDD18N20LZ include:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of around 18A, depending on the specific package and cooling conditions.
2. Low On-Resistance: This MOSFET offers a low on-state resistance (R_DS(on)), which reduces power losses and improves efficiency in power conversion applications.
3. Package Options: Often available in standard TO-220 or DPAK packages, facilitating easy integration into various circuit designs.
4. Thermal Performance: It is designed to handle significant power dissipation with proper heatsinking, ensuring reliable operation under high-load conditions.
This component is typically used in consumer electronics, automotive applications, and industrial equipment where efficient power management is crucial.
Equivalent
The FDD18N20LZ is a N-channel MOSFET with specific specifications. Equivalent products would typically have similar voltage, current, and performance characteristics. Potential equivalents include:
1. IRF540N
2. IRFB20N50K
3. STP20NF20
4. FDP18N20
Always verify the datasheet of each equivalent to ensure compatibility with your specific application requirements.
1. IRF540N
2. IRFB20N50K
3. STP20NF20
4. FDP18N20
Always verify the datasheet of each equivalent to ensure compatibility with your specific application requirements.
Features
The FDD18N20LZ is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its high efficiency and fast switching capabilities. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) rating of 200V and a continuous drain current (I_D) rating of 18A at 25°C.
2. Low On-State Resistance: The device offers a low R_DS(on) to minimize conduction losses, increasing efficiency.
3. Fast Switching: Designed for high-speed operations, it supports rapid switching, which is beneficial for power conversion applications.
4. Thermal Performance: The MOSFET is designed to handle significant power dissipation, offering good thermal stability and performance, often with a maximum power dissipation around 125W.
5. Package Type: It is typically available in a TO-220 package, which provides effective heat dissipation.
6. Applications: Suitable for use in applications such as power supply units, motor controllers, and other power management systems.
These features make the FDD18N20LZ a versatile choice for various electronic and power management applications.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) rating of 200V and a continuous drain current (I_D) rating of 18A at 25°C.
2. Low On-State Resistance: The device offers a low R_DS(on) to minimize conduction losses, increasing efficiency.
3. Fast Switching: Designed for high-speed operations, it supports rapid switching, which is beneficial for power conversion applications.
4. Thermal Performance: The MOSFET is designed to handle significant power dissipation, offering good thermal stability and performance, often with a maximum power dissipation around 125W.
5. Package Type: It is typically available in a TO-220 package, which provides effective heat dissipation.
6. Applications: Suitable for use in applications such as power supply units, motor controllers, and other power management systems.
These features make the FDD18N20LZ a versatile choice for various electronic and power management applications.
Pinout
The FDD18N20LZ is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It typically comes in a TO-252 package, also known as a DPAK, which has 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's switching. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): The source is the terminal through which current enters the MOSFET when it is in the 'on' state.
Additionally, the tab on the package is often connected to the drain, providing a path for heat dissipation and additional electrical connectivity. The FDD18N20LZ is designed for high-efficiency power management and switching applications, featuring low on-resistance and fast switching capabilities, making it suitable for use in power supplies, motor controllers, and other high-speed electronic applications.
1. Gate (G): This pin is used to control the MOSFET's switching. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): The source is the terminal through which current enters the MOSFET when it is in the 'on' state.
Additionally, the tab on the package is often connected to the drain, providing a path for heat dissipation and additional electrical connectivity. The FDD18N20LZ is designed for high-efficiency power management and switching applications, featuring low on-resistance and fast switching capabilities, making it suitable for use in power supplies, motor controllers, and other high-speed electronic applications.
Manufacturer
The FDD18N20LZ is a type of power MOSFET, and it is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a semiconductor supplier company that designs, manufactures, and markets a wide range of semiconductor components. These components are used in various applications, including power management, automotive, communications, computing, consumer electronics, and industrial technology. Onsemi is known for providing solutions that improve energy efficiency, enable advanced safety features, and reduce the environmental impacts of electronics and technology.
Application
The FDD18N20LZ is an N-channel MOSFET designed for efficient power management and switching applications. Its typical application areas include:
1. Power Supply Units: Used in DC-DC converters and AC-DC power supplies for efficient power regulation.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Battery Management Systems: Utilized in battery protection circuits due to low on-resistance and fast switching capabilities.
4. Inverters and UPS: Employed in inverters and uninterruptible power supplies for effective energy conversion.
5. Consumer Electronics: Integrated into devices for power management, such as laptops and other portable electronics.
Its low on-resistance and fast switching speeds make it ideal for these applications.
1. Power Supply Units: Used in DC-DC converters and AC-DC power supplies for efficient power regulation.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Battery Management Systems: Utilized in battery protection circuits due to low on-resistance and fast switching capabilities.
4. Inverters and UPS: Employed in inverters and uninterruptible power supplies for effective energy conversion.
5. Consumer Electronics: Integrated into devices for power management, such as laptops and other portable electronics.
Its low on-resistance and fast switching speeds make it ideal for these applications.
Package
The FDD18N20LZ is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that typically comes in a TO-252 package, also known as DPAK. This type of package is designed for surface mounting on a circuit board, providing efficient thermal performance and electrical conductivity.
