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FDD13AN06A0
+NomenclatureMOSFET N-CH 60V 9.9A/50A DPAK
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FabricantSemi - conducteurs
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Pièce fabricant #FDD13AN06A0
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Fiche technique FDD13AN06A0 DataSheet
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En stock22541
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Spécifications
| Attribut | Valeur |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 9.9A (Ta), 50A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 13.5mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 29 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1350 pF @ 25 V |
| Power Dissipation (Max) | 115W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Présentation
Description
The FDD13AN06A0 is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic and electrical circuits. It belongs to the N-channel MOSFET family, which is known for its efficiency in switching and amplifying electronic signals. This component is popular due to its low on-resistance and high-speed switching capabilities, making it suitable for a variety of applications including power management, DC-DC converters, and load switching.
Key specifications typically include a maximum drain-source voltage (V_DS) and a continuous drain current (I_D), indicating the voltage and current it can handle. Additionally, it often features a low gate charge, which contributes to reduced power loss and improved efficiency. The "FDD" in the name indicates the packaging style, often used in surface-mount technology for compact and efficient circuit designs.
By choosing the FDD13AN06A0, engineers can design circuits that require reliable and efficient power switching, making it an essential component in modern electronic devices.
Key specifications typically include a maximum drain-source voltage (V_DS) and a continuous drain current (I_D), indicating the voltage and current it can handle. Additionally, it often features a low gate charge, which contributes to reduced power loss and improved efficiency. The "FDD" in the name indicates the packaging style, often used in surface-mount technology for compact and efficient circuit designs.
By choosing the FDD13AN06A0, engineers can design circuits that require reliable and efficient power switching, making it an essential component in modern electronic devices.
Equivalent
The FDD13AN06A0 is an N-channel MOSFET. Equivalent products may include the IRFZ44N, IRLZ44N and STP55NF06, which have similar voltage and current ratings. However, always compare the datasheets for specific parameters like Rds(on), gate charge, and switching speed to ensure compatibility with your application.
Features
The FDD13AN06A0 is a N-channel MOSFET transistor known for its efficiency and compact size. Key features include:
1. Voltage and Current Ratings: It typically offers a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of around 12A, making it suitable for various power applications.
2. Low On-Resistance: This MOSFET has a low on-resistance (R_DS(on)), resulting in reduced power loss and enhanced efficiency.
3. Fast Switching Speed: Designed for high-speed performance, it allows for quick switching operations, which is beneficial in applications like power converters and motor drives.
4. Thermal Performance: It features a good thermal resistance junction-to-case, helping to manage heat dissipation effectively during operation.
5. Applications: Commonly used in power management, DC-DC converters, and load switch applications due to its reliability and performance.
These features make the FDD13AN06A0 a versatile choice for designers needing a robust MOSFET for medium-power applications.
1. Voltage and Current Ratings: It typically offers a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of around 12A, making it suitable for various power applications.
2. Low On-Resistance: This MOSFET has a low on-resistance (R_DS(on)), resulting in reduced power loss and enhanced efficiency.
3. Fast Switching Speed: Designed for high-speed performance, it allows for quick switching operations, which is beneficial in applications like power converters and motor drives.
4. Thermal Performance: It features a good thermal resistance junction-to-case, helping to manage heat dissipation effectively during operation.
5. Applications: Commonly used in power management, DC-DC converters, and load switch applications due to its reliability and performance.
These features make the FDD13AN06A0 a versatile choice for designers needing a robust MOSFET for medium-power applications.
Pinout
The FDD13AN06A0 is a Power MOSFET. It typically comes in a TO-252 package, which has three pins. Here is a concise description of the pin count and function:
1. Pin Count: Three pins.
2. Pin Functions:
- Pin 1 (Gate): This is the control terminal of the MOSFET. Applying a voltage to the gate controls the conductivity between the drain and source.
- Pin 2 (Drain): The drain is where the current flows out of the MOSFET. It is connected to the load in high-side switching applications.
- Pin 3 (Source): The source is where the current enters the MOSFET. It is typically connected to ground in low-side switching applications.
The FDD13AN06A0 is used for fast switching applications, often employed in power management and automotive systems.
1. Pin Count: Three pins.
2. Pin Functions:
- Pin 1 (Gate): This is the control terminal of the MOSFET. Applying a voltage to the gate controls the conductivity between the drain and source.
- Pin 2 (Drain): The drain is where the current flows out of the MOSFET. It is connected to the load in high-side switching applications.
- Pin 3 (Source): The source is where the current enters the MOSFET. It is typically connected to ground in low-side switching applications.
The FDD13AN06A0 is used for fast switching applications, often employed in power management and automotive systems.
Manufacturer
The FDD13AN06A0 is manufactured by ON Semiconductor, which is a leading supplier of semiconductor-based solutions. ON Semiconductor, now known as onsemi, is a company that designs, manufactures, and sells a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices. These components are used in various applications across multiple industries, such as automotive, telecommunications, computing, consumer electronics, and industrial markets. The company focuses on energy-efficient innovations that enable customers to reduce global energy use. Onsemi is known for its commitment to sustainability, providing infrastructure solutions, and supporting advancements in automotive and industrial applications.
Application
The FDD13AN06A0 is an N-channel MOSFET commonly used in various electronic applications. Key areas include power management systems, such as DC-DC converters and voltage regulation modules, where efficient switching is critical. It's also used in automotive electronics for controlling motors and actuators, as well as in consumer electronics for power supply circuits. Additionally, the FDD13AN06A0 can be found in industrial applications for driving inductive loads and in renewable energy systems, such as solar inverters, where robust performance and reliability are essential. Its low on-resistance and high current carrying capability make it suitable for applications requiring efficient power handling.
Package
The FDD13AN06A0 is a MOSFET, and it typically comes in a TO-252 package type, also known as DPAK. This package is designed for surface mounting and is widely used in power management applications.
