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FDC6333C
+NomenclatureMOSFET N/P-CH 30V 2.5A/2A SSOT6
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FabricantSemi - conducteurs
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Pièce fabricant #FDC6333C
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Package SOT-6
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En stock6107
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 2.5A, 2A |
| Rds On(Max) @ Id Vgs | 95mOhm @ 2.5A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 6.6nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 282pF @ 15V |
| Power - Max | 700mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Présentation
Description
Equivalent
1. Si4936DY - by Vishay Siliconix
2. FDW2520C - by ON Semiconductor
3. NTR4503N - by ON Semiconductor
4. Si2308DS - by Vishay Siliconix
When selecting an equivalent, verify the specifications like voltage, current, and package to ensure compatibility with your application.
Features
1. Dual N-Channel Configuration: Contains two N-channel MOSFETs, which allows for flexibility in circuit design, particularly useful in applications such as synchronous rectification and DC/DC converters.
2. Low On-Resistance: Offers low RDS(on), minimizing conduction losses and improving efficiency. This feature is crucial for high-efficiency power management in compact spaces.
3. Small Package Size: Comes in a small form factor, typically a SuperSOT-6 package, making it suitable for space-constrained applications.
4. Logic Level Gate Drive: Compatible with lower voltage gate drive, which simplifies interfacing with microcontrollers and other low-voltage circuits.
5. High-Speed Switching: Provides fast switching characteristics, which is beneficial for applications requiring quick response times.
6. Thermal Performance: Designed to handle significant power dissipation with efficient thermal management, making it reliable under high-load scenarios.
These features make the FDC6333C suitable for use in portable electronics, power supply circuits, and other power management systems requiring efficient and compact design solutions.
Pinout
1. Drain 1 (D1): Connected to the drain of the first MOSFET.
2. Source 1 (S1): Connected to the source of the first MOSFET.
3. Gate 1 (G1): Connected to the gate of the first MOSFET.
4. Source 2 (S2): Connected to the source of the second MOSFET.
5. Gate 2 (G2): Connected to the gate of the second MOSFET.
6. Drain 2 (D2): Connected to the drain of the second MOSFET.
The remaining two pins (usually pins 7 and 8) may be additional connections for the drain or source, depending on the specific configuration and package option. The FDC6333C is often used in power management applications due to its low on-resistance and efficient switching capabilities. Always refer to the manufacturer's datasheet for precise pin configuration and electrical specifications.