FDC6303N

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FDC6303N

+Nomenclature

MOSFET 2N-CH 25V 0.68A SSOT6

  • FabricantSemi - conducteurs

  • Pièce fabricant #FDC6303N

  • En stock7017

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Spécifications

Attribut Valeur
Part Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 680mA
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Power - Max 700mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6
Base Product Number FDC6303

Présentation

Description

FDC6303N is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a low on-resistance, enabling it to handle significant current loads with minimal power loss. This makes it suitable for use in power management circuits, DC-DC converters, and motor control systems.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of around 60A, and a low gate threshold voltage (V_GS(th)), which allows for easy driving by standard logic-level signals. Its compact package (usually in a TO-220 or similar format) facilitates efficient heat dissipation.
The FDC6303N is characterized by fast switching speeds, which enhance its performance in rapid on-off applications. Overall, it is a reliable and effective choice for engineers looking to optimize power efficiency in electronic designs.

Equivalent

The FDC6303N is a dual N-channel MOSFET. Equivalent products include the BSS138, SI2302, and 2N7000, depending on the specific application requirements such as voltage, current rating, and package type. Always verify specifications like Vds, Id, and Rds(on) to ensure compatibility for your circuit.

Features

The FDC6303N is an N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: Typically rated for a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 10A, depending on the thermal conditions.
3. Rds(on): Low on-state resistance (Rds(on)), typically around 10 mΩ at Vgs = 10V, ensuring minimal conduction losses.
4. Gate Threshold Voltage: A low gate threshold voltage (Vgs(th)) typically around 1-2V, allowing for efficient gate drive with low voltage levels.
5. Package: Available in a TO-220 or SO-8 package, facilitating easy integration into various designs.
6. Fast Switching: High-speed switching capabilities, making it ideal for applications in power management, DC-DC converters, and motor control.
7. Thermal Performance: Excellent thermal characteristics, allowing for effective heat dissipation.
Overall, the FDC6303N is a versatile MOSFET suitable for a range of electronic applications.

Pinout

The FDC6303N is a dual N-channel MOSFET housed in a 8-pin package. The pinout typically includes:
1. Gate 1 (G1) - Controls the first MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
7. Drain 3 (D3) - Common drain for both MOSFETs or an additional function depending on the configuration.
8. Source 3 (S3) - Common source for both MOSFETs or an additional function depending on the configuration.
The FDC6303N is commonly used in applications such as power management, switching circuits, and as a low-side switch in power converters. It features low on-resistance and fast switching times, making it suitable for efficient power designs. Always refer to the specific datasheet for detailed pin configurations and specifications.

Manufacturer

The FDC6303N is manufactured by Fairchild Semiconductor, which is a well-known company in the semiconductor industry. Fairchild Semiconductor specializes in designing and producing a wide range of semiconductor products, including power management solutions, analog devices, and discrete components. The company is recognized for its innovation in the field and has a significant presence in various markets, such as consumer electronics, automotive, and industrial applications. Fairchild was founded in 1957 and has played a pivotal role in the development of the modern semiconductor industry. In 2016, it was acquired by ON Semiconductor, further expanding its capabilities and product offerings. The FDC6303N is a specific type of N-channel MOSFET, commonly used in power management and switching applications due to its efficiency and reliability.

Application

The FDC6303N is a high-speed, low-voltage MOSFET designed for various applications, primarily in power management. Its key application areas include:
1. DC-DC Converters: Used in step-down and step-up converters for efficient power conversion.
2. Power Supply Units: Suitable for switching power supplies in consumer electronics and industrial equipment.
3. Motor Drivers: Ideal for controlling motors in robotics and automation.
4. Load Switching: Employed in switching loads in battery-powered devices and portable electronics.
5. LED Drivers: Utilized in driving LED lighting systems.
Its low on-resistance and fast switching capabilities make it suitable for high-efficiency applications.

Package

The FDC6303N is typically available in a SO-8 (Small Outline) package type. This surface-mount package is designed for efficient thermal performance and compact size, making it suitable for various electronic applications.

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