FDC5612

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FDC5612

+Nomenclature

MOSFET N-CH 60V 4.3A SUPERSOT6

  • FabricantSemi - conducteurs

  • Pièce fabricant #FDC5612

  • Package SSOT-6

  • En stock3820

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Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 4.3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 55mOhm @ 4.3A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 18 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 650 pF @ 25 V
PowerDissipation(Max) 1.6W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SuperSOT™-6

Présentation

Description

The FDC5612 is an N-channel PowerTrench MOSFET by ON Semiconductor, designed for high-efficiency power management in applications like DC-DC converters, motor control, and load switching.
### Key Features:
- Voltage Rating: 30V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 18mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-frequency operation
- Package: SOP-8 (Surface Mount)
### Applications:
- Synchronous rectification
- Battery protection circuits
- Power supplies (e.g., buck/boost converters)
The FDC5612 offers low conduction losses and high thermal performance, making it suitable for compact, energy-efficient designs.
For detailed specs, refer to the datasheet.

Equivalent

The FDC5612 is a P-channel MOSFET. Equivalent alternatives include:
- Fairchild FDN5612P
- ON Semiconductor NDS5612P
- Vishay Si2301DS
- Diodes Inc. DMG2305UX
These offer similar specs (e.g., -30V, -5.3A, SOT-23 package). Verify pinout and parameters for exact compatibility.

Pinout

The FDC5612 is a P-channel MOSFET in a SOT-23-3 package with 3 pins (Pin 1: Gate, Pin 2: Source, Pin 3: Drain).
Key Functions:
- Gate (Pin 1): Controls the MOSFET's switching.
- Source (Pin 2): Connected to the input voltage (typically higher potential for P-channel).
- Drain (Pin 3): Output connection to the load.
Features:
- -30V drain-source voltage (VDS).
- -5.3A continuous drain current (ID).
- Low on-resistance (RDS(on)) for efficient power switching.
Commonly used in load switching, power management, and DC-DC converters.

Application

The FDC5612 is a P-channel MOSFET commonly used in:
1. Power Management – Switching and load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in voltage regulators.
4. Motor Control – Driving small motors in consumer electronics.
5. LED Drivers – Controlling LED backlighting and lighting systems.
Its low on-resistance and compact package (e.g., SOT-23) make it ideal for space-constrained, low-voltage applications.

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