FDC3612

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FDC3612

+Nomenclature

MOSFET N-CH 100V 2.6A SUPERSOT6

  • FabricantSemi - conducteurs

  • Pièce fabricant #FDC3612

  • Package SSOT-6

  • En stock1570

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Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 2.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 125mOhm @ 2.6A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 20 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 660 pF @ 50 V
PowerDissipation(Max) 1.6W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SuperSOT™-6

Présentation

Description

FDC3612 is a foundational course in digital circuit design, typically covering key concepts like logic gates, Boolean algebra, combinational and sequential circuits, and finite state machines. It introduces hardware description languages (HDLs) such as Verilog or VHDL for circuit modeling and simulation. Practical labs often involve designing and testing digital systems using FPGA (Field-Programmable Gate Array) platforms. The course prepares students for advanced topics in computer architecture and embedded systems. Prerequisites may include basic electronics or programming knowledge. Check your institution’s syllabus for specifics.

Features

The FDC3612 is a N-channel MOSFET by ON Semiconductor, designed for high-efficiency power switching applications. Key features include:
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 1.8 mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-speed performance
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- Avalanche Energy Rated: Improves reliability in rugged conditions
- Package: Power-56 (5x6mm), compact and thermally efficient
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics. Offers high current handling with minimal power loss.

Pinout

The FDC3612 is a dual N-channel MOSFET in an 8-pin SOIC package.
Pin Functions:
1. Gate 1 (G1) – Controls the first MOSFET.
2. Source 1 (S1) – Source terminal for the first MOSFET.
3. Drain 1 (D1) – Drain terminal for the first MOSFET.
4. Drain 2 (D2) – Drain terminal for the second MOSFET.
5. Source 2 (S2) – Source terminal for the second MOSFET.
6. Gate 2 (G2) – Controls the second MOSFET.
7. NC (No Connection) – Unused pin.
8. NC (No Connection) – Unused pin.
Key Features:
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on))
- Logic-level gate drive
Used in power switching, DC-DC converters, and load management.

Application

The FDC3612 is a P-channel MOSFET commonly used in:
1. Power Management – Switching and load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in voltage regulators.
4. Motor Control – Driving small motors in consumer electronics.
5. Automotive Systems – Low-voltage applications like infotainment and lighting.
Its low on-resistance (RDS(on)) and compact package make it ideal for space-constrained, energy-efficient designs.

Package

The FDC3612 is a PowerTrench MOSFET from ON Semiconductor, available in a SOIC-8 (Small Outline Integrated Circuit) package. This surface-mount package is compact, measuring approximately 4.9mm x 3.9mm, and is commonly used for power management applications. It features 8 pins for efficient thermal and electrical performance.

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