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FDB045AN08A0
+NomenclatureMOSFET N-CH 75V 19A/90A D2PAK
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FabricantSemi - conducteurs
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Pièce fabricant #FDB045AN08A0
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En stock7467
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Spécifications
| Attribut | Valeur |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 138 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 25 V |
| Power Dissipation (Max) | 310W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | FDB045 |
Présentation
Description
This MOSFET showcases low on-resistance (RDS(on)) values, which contribute to reduced power losses and improved thermal performance. The device is housed in a TO-220 package, facilitating efficient heat dissipation and easy handling during assembly.
The FDB045AN08A0 is characterized by fast switching speeds, enabling it to operate effectively in high-frequency applications. Its robust performance and reliability make it a popular choice for both consumer electronics and industrial applications. Overall, this component is ideal for engineers seeking to optimize power efficiency in their designs.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power management applications.
2. Current Rating: The continuous drain current (I_D) is up to 45A, allowing it to handle substantial loads.
3. On-Resistance: It features a low on-resistance (R_DS(on)) of approximately 0.045Ω at V_GS = 10V, ensuring efficient power delivery with minimal heat generation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 1V to 3V, facilitating easier switching.
5. Package Type: It is housed in a TO-220 package, offering effective heat dissipation and ease of mounting.
6. Fast Switching Speed: The device supports high-frequency operation, ideal for switching power supplies and motor control applications.
Overall, the FDB045AN08A0 is designed for efficiency and reliability in various electronic applications.
Pinout
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D): The current flows out of this pin when the MOSFET is in the "on" state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
This MOSFET is designed for high-efficiency applications such as power management and switching.
Manufacturer
The company has a strong reputation for innovation in the field of semiconductor technology and has been involved in numerous advancements in power efficiency and miniaturization of electronic components. Fairchild's products are widely used in various applications such as consumer electronics, automotive, industrial automation, and telecommunications.
After being acquired by ON Semiconductor in 2016, Fairchild's extensive portfolio and expertise further strengthened ON Semiconductor's position as a leading supplier in the semiconductor market, focusing on energy-efficient electronics and sustainable technology solutions. Overall, ON Semiconductor continues to develop and market a broad range of semiconductor products, maintaining the legacy of Fairchild's contributions to the industry.
Application
1. DC-DC Converters: Efficient switching for voltage regulation.
2. Power Supply Circuits: Used in SMPS for high efficiency.
3. Motor Control: Acts as a switch in electric motor applications.
4. LED Drivers: Provides stable current regulation in lighting applications.
5. Battery Management Systems: Ensures efficient energy transfer and protection in battery-operated devices.
Due to its low on-resistance and high-speed switching capabilities, it is ideal for applications requiring high efficiency and thermal performance.