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FDA24N50F
+NomenclatureMOSFET N-CH 500V 24A TO3PN
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FabricantSemi - conducteurs
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Pièce fabricant #FDA24N50F
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Fiche technique FDA24N50F DataSheet
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En stock14731
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Spécifications
| Attribut | Valeur |
| Supplier | onsemi |
| Package / Case | Tube |
| Series | UniFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 24A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 200mOhm @ 12A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 85 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 4310 pF @ 25 V |
| Power Dissipation (Max) | 270W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
Présentation
Description
This MOSFET is housed in a TO-220 package, offering ease of installation and reliable thermal performance. Key features include fast switching speed, robustness against high voltage transients, and a good thermal stability, which contribute to the device's effectiveness in demanding environments.
The FDA24N50F is appreciated for its durability and performance, providing engineers with a reliable component for designing energy-efficient power systems. Its design and specifications make it a popular choice in both industrial and consumer electronics applications where high-efficiency power management is required.
Equivalent
1. IRFP250 (by Infineon / Vishay)
2. STP24NM50 (by STMicroelectronics)
3. APT24M50J (by Microchip)
4. FQA24N50 (by ON Semiconductor)
When selecting an equivalent, ensure that the voltage, current ratings, and package type match your requirements. Specifications and performance might vary slightly, so cross-reference datasheets to confirm compatibility.
Features
1. Voltage Rating: It has a drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 24A, allowing it to handle significant current loads.
3. R_DS(on): It features a low on-resistance of 0.18 ohms, which minimizes power loss and improves efficiency.
4. Fast Switching Speed: Optimized for fast switching performance, which is essential for high-frequency applications.
5. Thermal Performance: Equipped with good thermal characteristics, aiding in heat dissipation and reliable operation under thermal stress.
6. Package Type: Available in a TO-3P package, providing a robust structure for heat management and mechanical stability.
7. Applications: Commonly used in power supply, motor control, and various high-power switching applications, it is ideal for both industrial and consumer electronics.
These features make the FDA24N50F a versatile choice for various power electronic needs.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is switched on or off, allowing current to flow or be blocked between the drain and source.
2. Drain (D): This pin is where the load is connected. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This is the terminal through which the current exits the MOSFET when it is on.
The FDA24N50F is characterized by a maximum drain-source voltage (V_ds) of 500V and a continuous drain current (I_d) of 24A, making it suitable for applications requiring high voltage and current handling capabilities. It is commonly used in power supply circuits, motor control, and other high-power applications.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Used in both AC-DC and DC-DC converters for efficient power conversion.
2. Motor Control: Ideal for driving motors in industrial and consumer applications due to its fast switching capabilities.
3. Uninterruptible Power Supplies (UPS): Provides reliable power switching to maintain power delivery.
4. Lighting: Used in electronic ballasts for fluorescent and LED lighting systems.
5. Inverters: Suitable for use in DC-AC inverters, especially in solar power systems.
These applications benefit from the MOSFET's high-speed, low-loss switching, and robustness.