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FCH023N65S3L4
+NomenclatureMOSFET N-CH 650V 75A TO247
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FabricantSemi - conducteurs
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Pièce fabricant #FCH023N65S3L4
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Package TO-247-4
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En stock2354
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Spécifications
| Attribut | Valeur |
| Package / Case | Tube |
| Series | SuperFET® III |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 75A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 23mOhm @ 37.5A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 7.5mA |
| Gate Charge(Qg)(Max) @ Vgs | 222 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 7160 pF @ 400 V |
| Power Dissipation (Max) | 595W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
Présentation
Description
The FCH023N65S3L4 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency power management applications. This device is part of the SuperFET III series, known for delivering superior performance in terms of low conduction and switching losses.
Key features of the FCH023N65S3L4 include a low on-state resistance (Rds(on)) of 0.23 ohms, which enhances efficiency by reducing energy loss during conduction. It is capable of handling a maximum continuous drain current of 23A and can withstand a maximum drain-source voltage of 650V, making it suitable for high-voltage applications.
The MOSFET is also characterized by its fast switching speed, which is beneficial for reducing switching losses in high-frequency applications. It comes in a TO-247 package, which provides good thermal performance due to its larger size, facilitating better heat dissipation. This makes it well-suited for use in power supplies, inverters, and other applications requiring efficient power conversion.
Key features of the FCH023N65S3L4 include a low on-state resistance (Rds(on)) of 0.23 ohms, which enhances efficiency by reducing energy loss during conduction. It is capable of handling a maximum continuous drain current of 23A and can withstand a maximum drain-source voltage of 650V, making it suitable for high-voltage applications.
The MOSFET is also characterized by its fast switching speed, which is beneficial for reducing switching losses in high-frequency applications. It comes in a TO-247 package, which provides good thermal performance due to its larger size, facilitating better heat dissipation. This makes it well-suited for use in power supplies, inverters, and other applications requiring efficient power conversion.
Equivalent
The FCH023N65S3L4 is a 650V, 23A, N-channel MOSFET. Equivalent products may include:
1. Infineon's IPW65R037C6
2. STMicroelectronics' STP24N60DM2
3. ON Semiconductor's NTP65N065G
When selecting an equivalent, ensure to compare key parameters like voltage, current rating, Rds(on), and package to confirm compatibility with your specific application.
1. Infineon's IPW65R037C6
2. STMicroelectronics' STP24N60DM2
3. ON Semiconductor's NTP65N065G
When selecting an equivalent, ensure to compare key parameters like voltage, current rating, Rds(on), and package to confirm compatibility with your specific application.
Features
The FCH023N65S3L4 is a power MOSFET manufactured by ON Semiconductor. Key features of this MOSFET include:
1. Low On-Resistance: It offers low R_DS(on), which reduces conduction losses and improves efficiency in power conversion applications.
2. High Voltage Rating: With a maximum voltage rating of 650V, it is suitable for high-voltage applications.
3. Fast Switching: The device supports fast switching speeds, which enhances overall system performance and can reduce switching losses.
4. Robust Design: It is designed to handle high current and voltage stress, making it reliable in demanding applications.
5. Low Gate Charge: The low gate charge facilitates lower gate drive power requirements, helping in efficient drive circuitry design.
6. Enhanced Ruggedness: It offers increased ruggedness to withstand harsh electrical environments, enhancing reliability.
7. Applications: Commonly used in applications like power supplies, converters, motor drives, and other industrial applications.
These features make the FCH023N65S3L4 a suitable choice for efficient and reliable power management in various electronic devices.
1. Low On-Resistance: It offers low R_DS(on), which reduces conduction losses and improves efficiency in power conversion applications.
2. High Voltage Rating: With a maximum voltage rating of 650V, it is suitable for high-voltage applications.
3. Fast Switching: The device supports fast switching speeds, which enhances overall system performance and can reduce switching losses.
4. Robust Design: It is designed to handle high current and voltage stress, making it reliable in demanding applications.
5. Low Gate Charge: The low gate charge facilitates lower gate drive power requirements, helping in efficient drive circuitry design.
6. Enhanced Ruggedness: It offers increased ruggedness to withstand harsh electrical environments, enhancing reliability.
7. Applications: Commonly used in applications like power supplies, converters, motor drives, and other industrial applications.
These features make the FCH023N65S3L4 a suitable choice for efficient and reliable power management in various electronic devices.
Pinout
The FCH023N65S3L4 is a power MOSFET, specifically an N-channel MOSFET, designed for high-efficiency applications. It typically comes in a TO-247 package, which generally features three pins:
1. Gate (G): This pin is used to control the MOSFET's switching by applying a voltage that allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows into the MOSFET. It is the channel through which the load current passes when the MOSFET is turned on.
3. Source (S): This terminal completes the circuit for the current flowing through the MOSFET. It is connected to the ground or negative side of the voltage supply in most applications.
This MOSFET is designed for high-voltage applications, featuring low on-resistance and fast switching capabilities, making it suitable for use in power supply and conversion systems. Always refer to the specific datasheet for detailed specifications and pin configurations.
1. Gate (G): This pin is used to control the MOSFET's switching by applying a voltage that allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows into the MOSFET. It is the channel through which the load current passes when the MOSFET is turned on.
3. Source (S): This terminal completes the circuit for the current flowing through the MOSFET. It is connected to the ground or negative side of the voltage supply in most applications.
This MOSFET is designed for high-voltage applications, featuring low on-resistance and fast switching capabilities, making it suitable for use in power supply and conversion systems. Always refer to the specific datasheet for detailed specifications and pin configurations.
Manufacturer
The FCH023N65S3L4 is manufactured by ON Semiconductor. ON Semiconductor is an American company that specializes in the design, manufacturing, and marketing of semiconductor components. The company provides a wide range of products, including power and signal management, logic, discrete, and custom devices for various applications such as automotive, communications, computing, consumer electronics, industrial, medical, and more. ON Semiconductor is known for its focus on energy-efficient electronics and comprehensive solutions that help improve power performance and efficiency in electronic devices.
Application
The FCH023N65S3L4 is a power MOSFET that is typically used in applications requiring efficient power management and high-speed switching. Common areas include:
1. Power Supplies: Used in switch-mode power supplies (SMPS) for both consumer electronics and industrial applications.
2. Motor Drives: Suitable for driving motors in applications like electric vehicles and industrial machinery.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS) for efficient DC to AC conversion.
4. Lighting Systems: Applied in LED drivers and other lighting applications for energy efficiency.
5. High-Frequency Converters: Ideal for applications needing high-frequency operation with minimal loss.
1. Power Supplies: Used in switch-mode power supplies (SMPS) for both consumer electronics and industrial applications.
2. Motor Drives: Suitable for driving motors in applications like electric vehicles and industrial machinery.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS) for efficient DC to AC conversion.
4. Lighting Systems: Applied in LED drivers and other lighting applications for energy efficiency.
5. High-Frequency Converters: Ideal for applications needing high-frequency operation with minimal loss.
Package
The FCH023N65S3L4 refers to a specific MOSFET (metal-oxide-semiconductor field-effect transistor) model manufactured by ON Semiconductor. The package type for this component is typically TO-247, a widely used package for high-power semiconductors, providing good thermal performance and easy mounting. However, for precise details, it's best to consult the datasheet or manufacturer's documentation.
