FCD1300N80Z

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FCD1300N80Z

+Nomenclature

MOSFET N-CH 800V 4A DPAK

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series SuperFET® II
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain(Id) @ 25°C 4A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 1.3Ohm @ 2A, 10V
Vgs(th)(Max) @ Id 4.5V @ 400µA
Gate Charge(Qg)(Max) @ Vgs 21 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 880 pF @ 100 V
Power Dissipation (Max) 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA

Présentation

Description

The FCD1300N80Z is an N-channel MOSFET from ON Semiconductor, designed for high-power applications. Key features include:
- Voltage Rating: 800V
- Current Rating: 13A (continuous)
- Low On-Resistance (RDS(on)): 0.45Ω (max)
- Fast Switching: Optimized for efficiency in power supplies, motor control, and inverters.
- Robust Package: TO-252 (DPAK) for effective thermal management.
It is suitable for switching power supplies (SMPS), LED drivers, and industrial systems requiring high voltage and reliability. The device offers low gate charge and improved avalanche energy tolerance, enhancing performance in demanding environments.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the FCD1300N80Z (N-channel MOSFET, 800V, 12A) include:
- STP12N80K5 (STMicroelectronics)
- IRFB12N80A (Infineon)
- FQP12N80C (Fairchild/ON Semi)
- IXFH12N80P (IXYS)
These alternatives offer similar voltage/current ratings (800V, ~12A) and are suitable for switching applications. Verify pinout and thermal specs for compatibility.

Features

The FCD1300N80Z is an N-channel MOSFET with the following key features:
- Voltage Rating: 800V
- Current Rating: 13A (continuous)
- Low On-Resistance (RDS(on)): 0.45Ω (typ.)
- Fast Switching: Optimized for high efficiency
- Avalanche Energy Rated: Robust against voltage spikes
- Low Gate Charge (Qg): Enhances switching performance
- TO-252 (DPAK) Package: Compact and suitable for power applications
- Applications: Used in power supplies, motor drives, and inverters
This MOSFET balances high voltage handling with efficient switching, making it ideal for demanding power circuits.

Pinout

The FCD1300N80Z is an N-channel MOSFET with the following key specifications:
- Pin Count: 3 (standard TO-247 package: Gate, Drain, Source).
- Function: High-voltage switching (e.g., power supplies, motor drives).
- Gate (G): Controls switching.
- Drain (D): High-voltage input/load connection.
- Source (S): Output/ground connection.
- Key Ratings:
- VDS: 800V (drain-source voltage).
- ID: 13A (continuous drain current).
- RDS(on): 0.80Ω (on-resistance).
Designed for efficiency in high-power applications.

Package

The FCD1300N80Z is a power MOSFET typically available in a TO-247 package, designed for high-voltage and high-current applications. This package type offers robust thermal performance and mechanical durability, making it suitable for demanding power electronics like inverters and motor drives. The TO-247's large size aids in heat dissipation, ensuring reliable operation under heavy loads.

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